The (In)adequacy of Privatization

El dise˜no propuesto en este documento es el primer paso para la estimaci´on de la glucosa de manera no invasiva en el grupo de trabajo de la universidad, por tanto, la investigaci´on que se propone a futuro, es profundizar en el estudio ´optico de la glucosa, mediante pruebas de laboratorio con dispositivos profesionales, con esto medir la intensidad de cada uno de los emisores de luz, as´ı como adquirir diodos emisores tipo l´aser de diferentes frecuencias para con ello elegir el mejor emisor. Acompa˜nando esta investigaci´on, estudiar a profundidad los receptores ´opticos, en especial aquellos que en un mismo dispositivo es posible determinar la potencia de luz a diferentes frecuencias, con esto ser´ıa posible tratar m´as fen´omenos ´opticos como la espectroscopia Raman.

Con el objetivo de implementar un dispositivo robusto, es necesario construir una base de datos con un n´umero considerable de voluntarios, donde se tenga informaci´on tanto de pa- cientes diab´eticos como no diab´eticos, con diferentes pigmentaciones de piel e ´ındices de masa corporal diferentes; en las pruebas realizadas en este proyecto se pudo demostrar una rela- ci´on entre las medidas y los niveles de glucosa en sangre con referencia a un medidor port´atil que tambi´en describe un error, por lo que a futuro es importante realizar esta base de datos con referencia a medidas hospitalarias. En la documentaci´on encontrada los autores se˜nalan relaci´on entre el nivel de glucosa y la se˜nal de pulso card´ıaco, por lo que un trabajo futuro interesante ser´ıa tomar las pulsaciones card´ıacas con medidores hospitalarios y el nivel de glucosa de la misma manera, para se˜nalar la relaci´on que existe entre ambos, investigaci´on que podr´ıa encaminar el dispositivo port´atil a medir el pulso.

En cuanto al dise˜no del dispositivo es necesaria la construcci´on de una placa para el circui- to obtenido, adicionalmente estudiar la posibilidad de usar dispositivos de superficie de la adquisici´on y acondicionamiento de las se˜nales, para crear un dispositivo de menor tama˜no.

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Anexos

Ap´endice A.

Emisores de luz

2015-01-29 2

Version 1.0

SFH 4851

Ordering Information Bestellinformation Maximum Ratings (T_A = 25 °C) Grenzwerte

Type: Radiant Intensity Ordering Code

Typ: Strahlstärke Bestellnummer

I_F= 100 mA, t_p= 20 ms

I_e [mW/sr]

SFH 4851 500 (≥ 160) Q65111A6130

Note: Measured at a solid angle of Ω = 0.01 sr Anm.: Gemessen bei einem Raumwinkel Ω = 0.01 sr

Parameter Symbol Values Unit

Bezeichnung Symbol Werte Einheit

Operation and storage temperature range Betriebs- und Lagertemperatur

T_op; T_stg -40 ... 100 °C Reverse voltage Sperrspannung V_R 5 V Forward current Durchlassstrom I_F 100 mA Surge current Stoßstrom (t_p ≤ 200 µs, D = 0) I_FSM 1 A

Total power dissipation Verlustleistung

P_tot 200 mW

Thermal resistance junction - ambient Wärmewiderstand Sperrschicht - Umgebung

RthJA 500 K / W

Thermal resistance junction - case

Wärmewiderstand Sperrschicht - Gehäuse

R_thJC 350 K / W

ESD withstand voltage ESD Festigkeit

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

2015-01-29 3

Characteristics (T_A = 25 °C)

Kennwerte

Parameter Symbol Values Unit

Bezeichnung Symbol Werte Einheit

Peak wavelength Emissionswellenlänge (I_F = 100 mA, t_p = 20 ms) (typ) λ_peak 860 nm Centroid Wavelength Schwerpunktwellenlänge (I_F = 100 mA, t_p = 20 ms) (typ) λ_centroid 850 nm

Spectral bandwidth at 50% of Imax Spektrale Bandbreite bei 50% von I_max (I_F = 100 mA, t_p = 20 ms)

(typ) ∆λ 30 nm

Half angle Halbwinkel

(typ) ϕ ± 3 °

Dimensions of active chip area Abmessungen der aktiven Chipfläche

(typ) L x W 0.3 x 0.3 mm x

mm Rise and fall time of I_e ( 10% and 90% of I_{e max})

Schaltzeit von I_e ( 10% und 90% von I_{e max}) (I_F = 100 mA, R_L = 50 Ω) (typ) t_r, t_f 12 ns Forward voltage Durchlassspannung (I_F = 100 mA, t_p = 20 ms) (typ (max)) V_F 1.7 (≤ 2) V Forward voltage Durchlassspannung (I_F = 1A, t_p = 100 µs) (typ (max)) V_F 3.6 (≤ 4.6) V Reverse current Sperrstrom (V_R = 5 V)

(typ (max)) IR not designed for reverse operation

µA

Total radiant flux Gesamtstrahlungsfluss (I_F= 100 mA, t_p= 20 ms)

2015-01-29 4

Version 1.0

SFH 4851

Grouping (T_A = 25 °C) Gruppierung Temperature coefficient of I_e or Φ_e Temperaturkoeffizient von I_e bzw. Φ_e (I_F = 100 mA, t_p = 20 ms) (typ) TC_I -0.3 % / K Temperature coefficient of V_F Temperaturkoeffizient von V_F (I_F = 100 mA, t_p = 20 ms) (typ) TC_V -0.6 mV / K

Temperature coefficient of wavelength Temperaturkoeffizient der Wellenlänge (IF = 100 mA, tp = 20 ms)

(typ) TC_λ 0.3 nm / K

Group Min Radiant Intensity Max Radiant Intensity Typ Radiant Intensity

Gruppe Min Strahlstärke Max Strahlstärke Typ Strahlstärke

I_F= 100 mA, t_p= 20 ms I_F= 100 mA, t_p= 20 ms I_F = 1 A, t_p = 100 µs

I_{e, min} [mW / sr] I_{e, max} [mW / sr] I_{e, typ} [mW / sr]

SFH 4851 160 800 2110

Note: measured at a solid angle of Ω = 0.01 sr

Only one group in one packing unit (variation lower 2:1). Anm.: gemessen bei einem Raumwinkel Ω = 0.01 sr

Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1).

Parameter Symbol Values Unit

2015-01-29 5

Relative Spectral Emission 1) page 11 Relative spektrale Emission 1) Seite 11 Irel = f(λ), TA = 25°C

Radiant Intensity 1) page 11 Strahlstärke 1) Seite 11

Ie / Ie(100 mA) = f(IF), single pulse, tp = 100 µs, TA= 25°C 700 0 nm % OHF04132 20 40 60 80 100 950 750 800 850 I_rel λ OHF05641 3 10 Ι_e(100 mA)e Ι F I 102 1 10 100 mA 10-3 10-2 10-1 100 1 10

VSMS3700

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 25-Sep-13 1 Document Number: 81373

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Infrared Emitting Diode, 950 nm, GaAs

DESCRIPTION

VSMS3700 is an infrared, 950 nm emitting diode in GaAs technology, molded in a PLCC-2 package for surface mounting (SMD).

FEATURES

• Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm):

3.5 x 2.8 x 1.75

• Peak wavelength: λp = 950 nm

• High reliability

• Angle of half intensity: ϕ = ± 60° • Low forward voltage

• Suitable for high pulse current operation • Good spectral matching with Si

photodetectors

• Package matched with IR emitter series VEMT3700 • Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering • AEC-Q101 qualified

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared source in tactile keyboards • IR diode in low space applications • PCB mounted infrared sensors • Emitter in miniature photo-interrupters

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

948553

PRODUCT SUMMARY

COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)

VSMS3700 4.5 ± 60 950 800

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VSMS3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2

VSMS3700

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 25-Sep-13 2 Document Number: 81373

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage VR 5 V

Forward current IF 100 mA

Peak forward current tp/T = 0.5, tp= 100 μs IFM 200 mA

Surge forward current tp = 100 μs IFSM 1.5 A

Power dissipation PV 170 mW

Junction temperature Tj 100 °C

Operating temperature range Tamb -40 to +85 °C

Storage temperature range Tstg -40 to +100 °C

Soldering temperature Acc. figure 11, J-STD-020 Tsd 260 °C

Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 250 K/W

0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 80 90 100

21341 T_amb - Ambient Temperature (°C)

PV - Power Dissipation (mW) R_thJA = 250 K/W 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 90 100 21342 R_thJA = 250 K/W T

amb - Ambient Temperature (°C)

IF

- Forward Current (mA)

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 100 mA, tp = 20 ms VF 1.3 1.7 V

IF = 1 A, tp = 100 μs VF 1.8 V

Temperature coefficient of VF IF = 100 mA TKVF -1.3 mV/K

Reverse current VR = 5 V IR 100 μA

Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF

Radiant intensity IF = 100 mA, tp = 20 ms Ie 1.6 4.5 8 mW/sr

IF = 1.5 A, tp = 100 μs Ie 35 mW/sr

Radiant power IF = 100 mA, tp = 20 ms φe 15 mW

Temperature coefficient of φe IF = 100 mA TKφe -0.8 %/K

Angle of half intensity ϕ ± 60 deg

Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise time IF = 20 mA tr 800 ns IF = 1 A tr 400 ns Fall time IF = 20 mA tf 800 ns IF = 1 A tf 400 ns

VSMS3700

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 25-Sep-13 3 Document Number: 81373

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Relative Forward Voltage vs. Ambient Temperature

Fig. 6 - Radiant Intensity vs. Forward Current

Fig. 7 - Radiant Power vs. Forward Current

Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature

0.01 0.1 1 10 1 10 100 1000 10 000 tp - Pulse Length (ms) 100 95 9985 IF

- Forward Current (mA)

DC tp/T = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 Tamb < 60 °C 94 7996 101 100 102 103 104 10-1 I

- Forward Current (mA)

F 4 3 2 1 0 V F- Forward Voltage (V) 0.7 0.8 0.9 1.0 1.1 1.2 VF rel

- Relative Forward Voltage (V)

94 7990 Tamb - Ambient Temperature (°C)

100 80 60 40 20 0 IF = 10 mA

I_F - Forward Current (mA)

94 7956 103 101 ₁₀2 ₁₀4 100 0.1 1 10 100 Ie - Radiant Intensity (mW/sr) e - Radiant Power (mW)

I_F - Forward Current (mA)

94 8012 103 101 ₁₀2 ₁₀4 100 0.1 1 10 1000 100 Φ - 10 0 100 10 50 0 0.4 0.8 1.2 1.6 Ie rel ; 140 94 7993 IF = 20 mA Φe rel

VSMS3700

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 25-Sep-13 4 Document Number: 81373

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

900 950 0 0.25 0.5 0.75 1.0 1.25 λ - Wavelength (nm) 1000 94 7994 Φe rel

- Relative Radiant Power

I_F = 100 mA

0.4 0.2 0

Ie, rel

- Relative Radiant Sensitivity

94 8013 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 ϕ - Angular Displacement Drawing-No.: 6.541-5067.01-4 specifications according to DIN Technical drawings Issue: 6; 23.09.13 Dimensions in mm C A Ø2.4 Pin identification 3.5±0.2 1.75 ±0.1 0.9 2.8 ±0.15 2.2 3+0.15 0.8

Mounting Pad Layout

4

4 1.2

2.6 (2.8)

1.6 (1.9)

Dimensions: Reflow and vapor phase (wave soldering)

Area covered with solderresist

TSHG8400

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 03-Sep-13 1 Document Number: 81297

For technical questions, contact: [email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Speed Infrared Emitting Diode, 830 nm,

GaAlAs Double Hetero

DESCRIPTION

TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 830 nm

• High reliability • High radiant power • High radiant intensity

• Angle of half intensity: ϕ = ± 22° • Low forward voltage

• Suitable for high pulse current operation • High modulation bandwidth: fc = 18 MHz

• Good spectral matching with CMOS cameras

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Infrared radiation source for operation with CMOS cameras (illumination)

• High speed IR data transmission

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)

TSHG8400 70 ± 22 830 20

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

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