4% Zn doped thin film showed better PRAM characteristics including high resistance contrast and higher threshold voltage. It is therefore recommended that this composition be used in fabrication of a nanowire PRAM and its switching characteristics determined.
This work was mainly based on the electrical characterization of the sample for PRAM application. The use of x-ray diffraction method and TEM to determine the structure of the thin film for both as deposited and annealed samples is therefore recomended. This
will also enable confirmation of the crystallization temperature of the material. Differential scanning calorimetry could also shade more light on the crystallization temperature of each composition. It is recommended that the use of Rutherford Back Scattering technique or x-ray photoelectron spectroscopy be employed to determine the exact composition of the alloys of Zn:In2Se3.
This work employed the use of custom made pulse generator which could not be able to cycle the PRAM through several amorphous to crystalline resistances and vice versa. It is therefore in order to adopt the use of modern machine like Agilent 81104 pulse generator to determine the cycling endurance of the cell.
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APPENDICES