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In document Wang_unc_0153D_18551.pdf (Page 94-102)

In summary, the research works in this dissertation focused on developing efficient and stable perovskite solar cells by manipulating perovskite composition, morphology, interfacial layers, passivation technique. Efforts in this dissertation enhanced perovskite solar cell efficiency and shed light on the understanding of perovskite photovoltaic physics based not solid experimental evidences and discussions.

To improve MAPbI3 perovskite film coverage on substrate, a non-stoichiometry MAI/PbI2 precursor ratio was used which improved perovskite film morphology and device efficiency. A double fullerene structure was developed which was effective in passivate perovskite defect to improve efficiency. The devices with this structure showed a higher efficiency of 12.2% with high fill factor of 80%.

A F4-TCNQ doped PTAA hole transporting layer was used in MAPbI3 perovskite solar cells to improve the efficiency to 17.5%. The hydrophobic nature of PTAA polymer enlarged the perovskite grain size to reduce charge carrier recombination. F4-TCNQ doping increased the polymer conductivity which reduces device series resistance to increase fill factor.

Insulating polymers were used in perovskite solar cells as tunneling contacts to increase the efficiency of MAPbI3 perovskite solar cell to 20.3%. The tunneling layer spatially separates photogenerated electrons and holes at the perovskite/polymer interface by transporting electrons and blocking holes, which should lead to the reduction of the carrier surface recombination. The

tunneling layer can also serve as an encapsulation layer to prevent perovskite film from damage caused by water or moisture.

A wide bandgap inorganic perovskite material, CsPbI3, was studied, in which a method was developed to stabilize the black phase of CsPbI3. A small amount of sulfobetaine zwitterion was added in CsPbI3 precursor solution could facilitate the formation of black-phase CsPbI3 films with significantly improved phase stability in the air. The black-phase stabilization can be explained by the formation of small CsPbI3 grains which increased the grain surface area to stabilizes the α- phase.

An interesting phenomenon, self-doping in MAPbI3, was reported. The electronic properties of MAPbI3 perovskite films, i.e., carrier concentration, mobility, conductivity type, and energy level, could be significantly tuned by changing the ratio of MAI to PbI2 in the precursor solution. The carrier concentration varied as much as six orders of magnitude.

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