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Modelling and characterization of NAND flash memory channels

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Figure

Figure 1: Noise and Interferences of the MLC flash memory
Figure 2: Theoretical curves to show the e↵ects of RTN, CCI, and retention noises on memorycell threshold voltage distribution after 1K P/E cycling and 1 year retention.
Figure 3: Simulated curves to show the e↵ects of RTN, CCI, and retention noises on memorycell threshold voltage distribution after 1K P/E cycling and 1 year retention.
Figure 4: Cell threshold voltage distributions 4-level MLC flash memory

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