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Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities

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Figure

Fig. 2. (a) SEM cross-section image of the axial InGaN/GaN nanotube array obtained after the whole process for (a) low and (b) high magnification
Fig. 3(b), reveals higher emission intensity located at the axial position of the SQW for the whole array of InGaN/GaN nanotubes and on both their outer and inner surfaces
Fig. 4. (a) SEM images of a single dispersed InGaN/GaN nanotube. CCD images of a single InGaN/GaN nanotube pumped with µPL at (b) 41 kW/cm2, (c) 205 kW/cm2 and (d) 410 kW/cm2
Fig. 5. (a) Normalized E-field intensity of a 2.4 µm tall InGaN/GaN nanotube with a circular and non-circular shape
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