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Impact ionization in InAs electron avalanche photodiodes

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Figure

Fig. 1.Me measured on p-i-n diodes P1 (•), P2 (■), and P3 (▲).
Fig. 5.Photomultiplication characteristics measured and modeled for the P3diode structure, including the Me measured in this paper (•), the Me modeledwith the α from Brennan and Mansour [14] setting β = 0 (crossed line), andboth the Me (dot-dashed line) an
Fig. 7.Comparison between the excess noise approachingforshown are the excess noise characteristics modeled by Salehratios ofcharacteristics measured on InAlAson P3 diodes with radii of 50- Fe measuredµm (▲) and 100-µm (■) and excess noise (▽) [20] and HgC
Fig. 8.Comparison of e-APD-type excess noise characteristics, includingthose measured on a P3 diode with a 100-µm radius (■), modeled by Ma et al.[25] for HgCdTe diodes (dot-dash line) and modeled by the local model [2] fork = 0 (dotted line)
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