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High-performance GaAs/AlAs superlattice electronic devices in oscillators at frequencies 100–320 GHz

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Figure

TABLE I. Nominal device structures of the wafers used for millimeter-wavesuperlattice electronic devices.
FIG. 5. RF output powers from SLEDs of Wafers 1 (£), 2 (�), and 3 (�) ina second-harmonic mode over the frequency range of 240–320 GHz.
FIG. 7. Spectrum of a free-running oscillator with a SLED from Wafer 1 in a second-harmonic mode; RF power: 0.35 mW, center frequency: 272.94 GHz, ver-tical scale: 10 dB/div., horizontal scale: 1 MHz/div., resolution bandwidth: 200 kHz, and video bandwidth: 2 kHz.

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