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Development of tunnel diode devices and models for circuit design and characterization

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Figure

Fig. 2.1. Generic I-V characteristic for TDs.  Peak and valley characteristic parameters are labeled
Fig. 5.1. JP for Ge ETDs vs. doping concentration.  Theoretical results were calculated using Eq
Fig. 5.3. Measured proximity diffused ETD, modeled ITunnel, IExcess, IDiffusion, and ITotal
Fig. 5.4. Measured Si/SiGe RITD, modeled ITunnel, IExcess, IDiffusion, and ITotal.  The table (inset) includes the model parameters used for ITotal
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