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Investigation of induced charge damage on self-aligned metal-gate MOS devices

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Figure

Figure 1.1:  Cross-section of a modern NMOS transistor
Figure 3.2:  Accumulation, depletion and inversion as related to the C-V curve (p-type)
Figure 3.4: I-V breakdown measurement
Figure 4.1: Direct band-to-band tunneling & Fowler-Nordheim tunneling [18]
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