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Cubic GaN/AlGaN based quantum wells optimized for applications to tunable mid-infrared photodetectors

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Figure

Table 1 Ei,fResults obtained by the application of electric field K perpendicular to the planes of the layers
Table 2 Ei,fResults obtained by the application of electric field K perpendicular to the planes of the layers
Fig. 4 subjected to external electric field. Absorption lines are plotted for different values of electric field with  The absorption profile of the optimized asymmetric quantum well with one embedded layer, the increment of 20 kV/cm going from the right to the left hand side of the figure

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