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Development of Zn-IV-Nitride Semiconductor Materials and Devices

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Figure

Figure 1.1: Zn-IV-Nitrides theoretical band gaps at 0K versus alattice parametersplotted against the experimental data for III-Nitrides
Figure 1.2: The ZnSnN2 wurtzite lattice with a) Pna21 symmetry, b) Pmc21 symmetry,and c) random Zn and Sn cation positioning
Figure 2.2: Atomic force micrographs of ZnSnN2 surfaces a) 45 min b) 5 hours c) 16hours d) 24 hours and their RMS roughness
Figure 2.3: XRD of ZnSnN2 sputtered on various substrates: graphene, Ti foil, FTO,and Si
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