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Exploring Si/SiGe quantum-well thin-film thermoelectric devices using TCAD simulation

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Figure

Figure 11. Conduction band discontinuities EC(x)-EC(y) in meV between strained Si1-xGex active layer on a
Figure 19. The   p /′  p  ratio versus QW thickness at different barrier doping, which is useful to distinguish
Figure 24.   S as a function of tW at multiple barrier doping levels with tB of 20nm
Figure 26. Experimental and modeling thermal conductivity on ultra-thin single crystal Si [29] that reveals
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