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Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems

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Figure

Figure 1 Top:AlAs / (Al Refractive index profile of the VECSEL struc-ture at a temperature of 300 K (shaded area)
Figure 3 Comparison of calculated (solid line) and measured(dash-dotted line) with the wavelength-dependent filter function(dashed line) photoluminescence spectrum of the VECSEL struc-ture for normal incidence at a temperature of 300 K
Figure 4 Top:well are displayed in the inset for carriers densities of 0.002,2, 3, 4 and 5(solid line), 325 K (dash-dotted line) and 350 K (dashed line)
Figure 6 Pump power needed to sustain the threshold gain as afunction of the pump wavelength
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