Rochester Institute of Technology
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2007
Nanomaterials for Organic Solar Cells
Annick Anctil
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Abstract
Organic solar cells performances are mainly limited by photon absorption due to the
mismatch between the conducting polymer and the solar spectrum, as well as, exciton diffusion
sincetheexcitons are notefficientlydissociatedintofreecharges. Nanomaterialssuch asfullerenes,
quantum dots, and carbon nanotubes were investigated in combination with conjugated polymers to allow for a broader harvesting of the solar spectrum. For P3HT:PCBM solar cells, optimal
efficiencies were obtained using a combination of annealing before, as well as, after contact deposition. Usingtheconceptsdeveloped forP3HT,theeffectofsolvent,molecularweight, andthe
type of fullerenes was investigated using MEH-PPV. Efficiencies were increased from 0.57% to
2.06% under AMI. 5 by optimizing the polymer molecular weight, the device thickness and the
fullerene derivative. Three types of quantum dots were investigated to enhance photoconversion
below the polymer absorption: CdSe, InP and InAs QDs. Sub-bandgap photoconversion was
observed around 1.3eVforInAs QDs. Finally, both SWNT and WMNT were investigated for improved charge dissociation and transport in organic solarcells. The maximum loadingof carbon
nanotubes was increased by using cut carbon nanotubes as well as by using an intrinsic layer.The
most promising option for using carbon nanotubes in polymeric solar cells was found to be the
Table
ofContents
LISTOF FIGURES I
CHAPTER1: INTRODUCTION 1
1.1 Conjugated Polymers 4
1.2 Fullerene Derivatives 7
1.3 Quantum Dots 8
1.4 Carbon Nanotubes 10
CHAPTER2: FULLERENES 11
2.1 Experimental 11
2.2 Poly(3-alkylthiophenes) 12
2.3.1 Poly(3-alkythiophenes)/C60 PCBMcomposites 14
2.3.2 Annealingand molecular weight 15
2.3 MEH-PPV 20
2.3.1 Chainorientation andthickness 20
2.3.2 Fullerenesoptimization 24
CHAPTER 3: QUANTUM DOTS 27
3.1 Experimental 27
3.1.1 Covalentsynthesisof CdSe QDs 27
3.1.2 Non-covalentsynthesisof InPnanocrystals 28
3.1.3 Covalentsynthesisof InAsnanocrystals 28
3.2 CdSe Quantumdots 29
3.3 Indium Phosphide 32
3.4 IndiumArsenide 35
CHAPTER 4: CARBON NANOTUBES 40
4.1 Experimental 40
4.1.1 Intrinsic Layer Fabrication 41
4.1.2 Aligned Arrays 42
4.2 Laserproduced carbon nanotubes composites 42
4.3 Intrinsiclayer 46
4.4 Aligned Arrays 48
CONCLUSION 51
APPENDIX 53
Appendix A: Photovoltaiccharacterization 53
List
ofFigures
Figure 1: Photovoltaiceffect in organic solar cells5 l
Figure 2: Conditionsfor charge transfer 2
figure 3: amoandam 1.5spectrumwith various polymer absorption 3
Figure4:Chemicalstructures ofMEH-PPVandP3HT 5
Figure 5:(a)Polythiopheneand(b)the4possible triads resulting from combination of the3
possible diads12 5
Figure6:Chemicalstructure ofPPVandMEH-PPV 6
FIGURE 7: C60,C60PCBMANDC70PCBM19 7
Figure 8: Bandgaptuning with particle sizefor various semi-conductors 8
Figure 9: Schematiclayout ofa bulk heterojunction 11
Figure 10: Effectof the addition ofC60PCBMon thecurrent-voltage(I-V)curve forP3HT 12
Figure 11:Spectralresponseof the composite and absorption of each component 13
Figure12: Energylevels for differentpoly(3-alkylthiophenes)29, 30 13
Figure 13: ComparisonbetweenP3HT: PCBM andP30T:PCBM (1:1 ratio) Under AMO 14
Figure 14:(a)Curent Densitymeasurements for different ratiosofP3BT:P30Tbycomparison to
P3HT 15
Figure15: Energylevel forC60and70withP3HT 17
Figure 16: ComparisonbetweenC60andC70PCBMwithP3HT(1:1)UnderAMO 17
Figure 17: Spectralresponse of devices made usingC60 PCBMandC70PCBMwithP3HT(1:1
w/w). In onset,theresponsefrom theC70is enhanced for the lower energy 18
Figure18:P3HT:PCBM(1:0.8)INDCBWITH PRE-ANNEALING AT110CFOR30MINUTES under argon
AND POST-ANNEALINGON A HOT PLATE IN THE GL0VEB0X AT140CFOR30MINUTES.TESTED
UNDERAM 1.5 19
FIGURE 19:MEH-PPVCHAIN CONFORMATION WHENDEPOSITEDFROM(A)A SOLVENT CONTAININGABENZENE
RING AND(B),WITHOUT BENZENE RING 21
Figure 20:Current-densitymeasurementsofMEH-PPV:PCBM(1:4)spin-coated froma solution
OF O-XYLENE OR CHLOROFORM 21
Figure 21: J-VComparisonofMweffect on theperformanceofMEH-PPV:PCBMorganic solar
with a4:1weight ratio(TestedUNDERAMI.5) 22
Figure 22:l-Vcurves ofMEH:PPV-PCBM(1:4byweight)spin-coated from o-xylene at different
speeds 23
Figure23: Effectof spin-speed onExternalQuantum Efficiency(E.Q.E.)forMEH-PPV:PCBM (1:4
Figure24: l-Vcurves forMEH-PPVwithC60 PCBMorC70 PCBM(1:4by weight).Testedunder
AM1.5 24
Figure 25:(a)l-Vcurves for differentC70ratioinMEH-PPV:PCBMdevices(AM1.5)and(b)
spectral response 25
Figure 26: MEH-PPV/C70optimal spectral response overlaid with theAM 1.5spectrum 26 Figure 27: Energylevel diagram forCdSe QD: MEH-PPVcomposites 30
Figure28: l-Vcurves forMEH-PPVwithCdSe QDsandC60 PCBMin different ration.Tested
underAMO 31
Figure 29: UV-visspectra of theCdSe QDsused for theMEH-PPV:CdSe QDscomposites with the External Quantum Efficiency(E.Q.E.)of the different composites 32
Figure 30: Temporalevolution spectra ofInPQD 33
Figure 31: Fluorescenceand absorption ofInPQDsin hexanes after30minutes growth 34 Figure 32:(a)InP QDscoated by the myristic acid(b) l-Vcurves ofP3HT:InPQDscomposite under
AMO 34
Figure 33:(a)UV-Visspectra depicting temporal evolution ofInAs QDssynthesized using a(1.1):1 ratioand(b)optical spectra ofInAs QDsfor different precursor ratios AFTER1HOUR
GROWTH 35
Figure34: UV-Visabsorption spectra forInAs QD:MEH-PPVcomposites with increasing w/w LOADING OFQDS. THEDASHED LINE REPRESENTS THE ABSORPTION SPECTRUM FOR THE STARTING
QDs 36
Figure 35:l-Vcharacteristicfor(MEH:PPV:InAsQDs:PCBM,byweight)under simulatedAMI. 5
ILLUMINATION 37
Figure 36: ExternalQuantum Efficiency(EQE)of(MEH-PPV:InAsQD:PCBM,byweight)devices and an expanded region of the spectral response data below the polymer bandgap.the
inset shows the typicalplspectra forinasqdswith a bandgap of~1.3 ev 37
Figure37: Energylevel diagram for the composite devices(literaturevalues extracted forInAs
qds45 meh-ppvandpcbm46). thedashed lines show device recombination pathways 38 Figure 38: Exampleof purifiedSWNTsbefore and after the cutting in a piranha solution 40
Figure39:PPVcuring 41
Figure 40: Sublimationprocessof pentacene onITOand device structure fabricated using
MEH-PPV:PCBM(1:4byWEIGHT) 41
Figure41:ConditionforMWNTaligned arraysgrowth usingCVD,Scanningelectron
micrographof chemical vapor deposited multi wall carbon nanotube array on indium
tinoxide coated glass and photovoltaic structure 42
Figure42:(a)% SWNTin1:1:PCBMunder simulatedAMOand(b)energy diagram of the
COMPOSITE WITH POSSIBLE RECOMBINATION PATHWAYS 43
Ill
Figure 44:(a)PolymerComparisonMEH-PPV:PCBM (1:4)- P3HT: PCBM
(1:1)and(b)effectof the increasing ofSWNTin MEH-PPVdevices forMEH-PPV: PCBM (1:4byweight) 44
Figure 45: Energydiagram for different conjugated polymers withSWNTandPCBM 45
Figure 46:(a)l-Vcurves forMWNTcompared toSWNTin MEH-PPV: PCBM (1:4byweight)and
(b)spectral response 45
Figure47:(a)Structureof the device with the intrinsicPPVlayer and(b)current-density
MEASUREMENTS WITHHlPCOSWNT 46
Figure 48: Energylevel diagram forPPV/P3HT:PCBM:SWNTdevices(literaturevalues for
SWNT30) 47
Figure 49: l-Vfor1%carbon nanotubes(SWNTorMWNT)with and without thePentacenelayer
INMEH-PPV:C60PCBM(1:4BYWEIGHT) 47
Figure 50: Energydiagramof pentacene intrinsic layerwithP3HT/SWNT/PCBMcomposite
(LITERATUREVALUEFORPENTACENE48 48
Figure 51: Nomarskimicrograph(10X)ofMWNTaligned arrayscovered with P3HT:PCBM(1:1)
ACTIVE LAYER.THEGREEN COLOR REPRESENTMWNTGOINGTHROUGHTHE POLYMER 49
Figure 52:Schematicdevice diagram and current-voltage measurements(AM1.5) 49
Figure 53: Energylevel inMWNTaligned array withP3HT:PCBM composite 50
Figure 54:Current-Voltage(l-V)curvesforan organic solar cell 53
Chapter 1 : Introduction
I
1Chapter 1:
Introduction
Currently there exists a large need for inexpensive renewable energy sources;
particularly low-cost photovoltaic devices. For this reason, organic solar cells have been
receiving an increasing amount of attention over the last decade. These devices offer the
potential for low cost processing, flexibility, and light weight that could meet the needs of a
number of applications. Not only are organic semiconductors cheaper than their inorganic
counterparts, but due to the means by which they are fabricated, their properties can be
controlledduringchemical synthesis.
Organic semiconductor development started in the 1970s, but the interest in these
materialsincreased dramaticallyafterTangcreatedthefirst homojunction in 1986.1
However, a
major milestone in organic photovoltaics was achieved by Yu et al. in 1995 in which both
electron donorand acceptormaterialswere blendedintoa single layerand created whatis now
called a bulk
heterojunction.2
Blending had the advantage of increasing the interfacial area between the donor and acceptor, resulting in considerably higher photocurrent density.
Recentlyefficiencies up to 5% have been reported byoptimizingthe nanomorphologyofthese
heterojunctions using fullerenes derivatives in particular in combination with conjugated
polymers.3,4
In ordertoget a better understandingofthe limitationsand current challenges of
organic solar cells, it is essential to understand the photogeneration process in a typical bulk
heterojunction asillustrated in Figure 1.
6
*d> J7I
Glass+ITO
PEDOTPSS
_,
"
#^^LI]rjr .J Bulk heterojunction
* L*%% ?* *
m Aluminum
Figure 1:Photovoltaiceffectinorganic solar cells
1. Photonabsorption
2. Excitongeneration
3. Excitondiffusion
4. Exciton dissociation
5. Carriertransport
Chapter 1 : Introduction
I
2Accordingto Figure 1, an exciton isfirstgenerated during photon absorption dueto the
electronic transition from HOMO to LUMO levels in the donor material. Photon absorption
depends on the optical absorption coefficient as well as the thickness of the donor material.
Thisphotoexcitation results inthe generationof an electron-hole pair which is inan excited but
neutral state with limited lifetime.The electron and the holeare bound byan energy which is
smallerthan the energy gap between the permitted bands and formwhat is called an exciton.
The exciton binding energy is around 0.1 to 0.2 eV for organic
materials.6
Due to its limited
lifetime, the exciton needs to diffuse fast enough to ajunction before recombination can take
place in ordertocontributeto the photocurrent.Thislimited diffusion length severelylimitsthe
thickness of these devices. In the presence of a sufficiently strong internal electric field, the
exciton can split into a free hole and an electron-. This internal field can be provided at the
donor-acceptor interface, ifthe difference in electron affinities is suitable. It is estimated that
only 10% ofphotoexcitations lead tofree charge carriers in conjugated
polymers.7
Blending of
conjugated polymerswith electron acceptors such asfullerenes, is averyefficientwayto break
apart photoexcited excitons into free charge carriers. Once the charges are free, they travel
towards the electrodes using the classic hopping mechanism in organic
materials.8 However,
their mobilitycan bereduced bytraps.
A gradient in the chemical potentials of electrons and holes is built up in a
donor-acceptorjunctionwhich is determined bythe differencebetween the HOMOlevel ofthe donor
and the LUMO levels of the
acceptor.7
This internal electrical field determines the maximum
open circuit voltage (Voc) and contributes to the field-induced drift of charge carriers. Finally,
the charges can be collected at the electrodes as long as: (Ef)cathode<(ELUMo)acceptor and
(Ef)anode>(EHOMo)donor(seeFigure 2).
Energy(eV)
<J>*
* HOMOHOMO
Donor
HOMO
Acceptor
Chapter 1 : Introduction
I
3In order to obtain an efficient solar cell, all the steps discussed above have to be
optimized. First, to optimize the photon absorption, the optical losses have to be minimized.
Considering that the refractive index of organic materials is relatively low, the reflection
coefficient is also relatively low(ft/4%)6 and therefore is notthe main factor. The poor photon
absorption is mainly due to the mismatch between the solar spectrum and the absorption
spectrum of the conducting polymer. In theory, to have an optimal solar cell, the acceptor
bandgapshould bearound 1.4eVforwhichthemaximum efficiencywould be31%under1sun
AM1.5.9
The majorityofsemiconducting polymers have bandgaps higherthan 2 eV (620 nm),
which limits the possible theoretical maximum photovoltaic conversion efficiency to less than
30%10
-AMO
-AM1 5
-PV
MEH-PPV
P3HT
Pentacene 2500
2000
E 1500
0)
|
1000 (13500
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Energy(eV)
Figure 3: AMOandAM1.5spectrum with various polymer absorption
Photon absorption can also be maximized byoptimizing the devicethickness. Asample
too thin causes part ofthe incident radiationto be unabsorbed, resulting in these photons not
contributing to the charge generation. Conversely, a sample too thick causes series resistance due to the exciton generation zone being too far from an interface. Subsequently,
recombination occurs before dissociation of the excitons. Since polymer absorptions
coefficients may reach 105cm"1, a 100 nm thickness is generally enough to absorb most ofthe
Chapter 1 : Introduction
I
4Anothermain challenge is related to theexciton diffusion due to conjugated polymers,
which exhibit poor chargetransport in bulk heterojunctions. In orderto increase theefficiency,
the donor and acceptor phases should be separated by a distance of 10 to 20 nm and the
interfacial area should be increased. The use ofdifferent work-function electrodes, as well as
concentration gradients, can contribute to the charge transport toward the electrodes. The
donorand acceptor phases mustforman interpenetrating networkto efficientlydissociate and
transport the charges. This nanoscale morphology has been shown to be strongly affected by
the processing conditions, such as the deposition technique, the solvent, the processing
temperatures,thedonor/acceptorratio,thesolutionconcentration,andthethermalannealing.
Therefore, to improve efficiency, an improved harvesting of light could be achieved
through the use of various nanomaterials which will contribute through energy-transfer. The
focus of this dissertation will be on the investigation of nanomaterials including fullerenes,
quantumdots, and carbon nanotubestodeterminetheseeffects on the production ofenergy in
various conjugated polymers solar cells. Since the morphology of the active layer has a direct
impact on the performance ofthe organic solar cells, various processing studies will also be
presented (solvent, annealing, components ratio, molecular weight). With this objective in
mind,thevarious materialsthatwerestudied aredescribed below.
1.1 Conjugated Polymers
Theconjugated polymersbackbone iscomposed ofalternatingsingleand doublebonds.
Eachcarbon bindsonlyto threeadjacent atoms, resulting in one electron per carbon leftinthe
Pzorbital.The overlapofthese Pzorbitals causestheformation of rebondsalongthebackbone,
and derealization ofthere electrons. Polymerswith a delocalized re electron system can absorb
sunlight, create photogenerated charge carriers and transport these charge carriers. The
absorption of conjugated polymers ranges from yellowto red. The absorption for one type of
polymer can alsobechanged bytheadditionof various pending
Chapter 1 : Introduction
I
5Theprincipal conjugated polymerscanbe divided in 3families7 :
I. Derivativesof phenylene vinylenebackbones
(poly[2-methoxy-5-(3,7-dimethyloctyloxy)]-l,4-phenylevinylene (MEH-PPV)
II. Derivativesofthiopheneschains(poly(3-hexylthiophene)(P3HT)
III. Derivatives of fluorine backbones
(poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl-l,4-phenylenediamine) PFB
Thetwoprincipal conjugated polymersinvestigated forthis project were
Poly[2-methoxy-5-(2-ethylhexyloxy)-l,4-phenylenevinylene] ( MEH-PPV) and
(Poly(3-hexylthiophene-2,5-diyl))(P3HT)
S \ //
MEH-PPV P3HT
Figure 4: Chemicalstructures ofMEH-PPVandP3HT
The poly(3-alkyls) (P3AT) family of polymer is comprised of derivatives of thiophenes
with different regioregularity and pending chains. All polythiophenes have similar optical
bandgaps inthe order of 1.9eV. As thechain length is increased,the electrochemical bandgap
also increases. P3AT are polythiophenes with three asymmetric substituted thiophenes,
resulting in 3 possible couplings between the 2 and 5 positions. The head-head configuration
(HH:2-2 coupling) causes the thiophene group to be out of phase, which reduces the
conjugation andtheconductivityofthepolymer.
^h
[image:13.536.182.363.255.349.2](a)
Chapter 1 : Introduction
I
6The record powerefficiency devices have been fabricated using poly(3-hexylthiophene)
with high regioregularity. High regioregularityoptimizes thechain packing,which improvesthe
optical and transport properties of the P3HT:PCBM blend upon
annealing.13 Microcrystalline
lamellar stacking is generally accepted as the main factor for high efficiency devices. This
structure can be improved through thermal annealing14
and combined thermal and external voltage
annealing.15,16
The optimal annealing temperature is related to the glass transition
temperature which varies with molecular weight and polydispersity. Annealing causes
recrystalization, resulting in improved charge transfer and a reduced density of defects at the interfaces.7
Poly(p-phenylene vinylene) (PPV) is a conductive polymer with limited interest for
organic solar cells due to its absorption around 2.5 eV. By modifying this basic structure to poly[2-methoxy-5-(3,7-dimethyloctyloxy)]-l,4-phenylevinylene (MEH-PPV), the band gap has
shifted to lower energy (~2.1 eV), which is an improved energy absorption for the solar
spectrum.
Poly(p-phenylene vinylene) PPV
Poly[2-((2-ethylhexyl)oxy-5-methoxy-p-phenylene)vinylene]
MEH-PPV
Figure 6: Chemicalstructure ofPPVandMEH-PPV
The addition of branched side chains also improves the solubility of the derivative
compared to PPV that allows solution processing and easy blending of polymers for the
preparationofbulkheterojunction.11 The hole-conductivityfor MEH-PPV is lowerthan P3HT. In
order to obtain an efficientcharge separation, a 4:1 (PCBM: MEH-PPV) weight ratio is typically
used. Due to the high efficiencies obtained with P3HT, MEH-PPV has not been a focus of research. However with an open-circuit voltage of approximately 0.8V, compared to 0.6V for bulk heterojunctions with C60PCBM, MEH-PPV represents an interesting alternative for
increasing efficiencies. At this point, the highest efficiency reported is 2.07% underAMI. 5 (80
Chapter 1 : Introduction
I
7annealing and optimal processing conditions has been done and this has resulted in lower
efficienciesforthispolymer-fullerene system.
1.2 Fullerene Derivatives
Carbon fullerene typically refers to a molecule containing 60 carbon atoms with
icosahedralsymmetry. Italso includes largermolecular weightfullerenessuch as C70, C76, C78
18 C80that possessdifferentgeometric structures .
Figure 7:C60,C60 PCBM andC70 PCBM
C60 or buckminsterfullerene, is an electron acceptor that can be electrochemically
reducedupto6electrons. Its solubility is limited,thereforea soluble derivative called PCBM
(1-(3-methoxycarbonyl)propyl-l-phenyl[6,6]C61) which was first synthesized by Wuld et al., is
mainlyusedtomake solar cells7.
The size and dispersion ofthe PCBM nanophases have a direct impact on the devices'
performances. The most widely used composition ratio of PCBM:P3HT is 1:1. Forthis ratio, a
sudden drop in efficiency is observed after short annealing; an effect associated to the
formation of large PCBM aggregates. By loweringthe PCBM:P3HT ratioto 0.8:1, the annealing
temperature has been increased from 110C to 150C, resulting in higher efficiencies. The
higher annealing temperature improves the recrystalization. The lower PCBM content reduce
the sizeofthe PCBM aggregatescausing degradation, allowing longerannealingtime. Sincethe
structureis closertoa equilibriummixture,degradation ofthecompleteddeviceisalso slower.
Only recently has this ratio been reduced furtherto 0.6:1 making the first 6% efficient device
Chapter1 : Introduction
I
81.3 Quantum Dots
Generally, polymer photovoltaic devices rely solely on photon absorption by the
conducting polymer andare bandgap limited(typically >2 eV) in regardsto the solarspectrum.
Quantum dotsare capable of size-dependent optical absorption, exciton dissociation centersin
conjugated polymers, and a meansfor carriertransport.Therefore, the combination oforganic
and inorganic semiconductors offer the possibility of absorbing a larger portion of the solar
spectrum. Byvaryingthesize andthe material ofthe quantumdots, the band gapcan betuned
to thedesired range.
0
2.5 2 1.5 1
QD Eg Energy(eV) ill'
1.7 1.421.271.12 0.36 BuIkE (eV)
g
Figure8:Bandgaptuningwith particle sizeforvarious semi-conductors
UsingQDs isconsidered a promisingoptionsinceinorganicsemiconductornanoparticles
can have high absorption coefficients and high photoconductivity compared to many organic
semiconductor materials. Excitonswhich are created upon photo-excitation are separated into
free charges efficiently at interfaces between organic semiconductors and inorganic
semiconductors. Hybrid solar cells have been demonstrated in conjugated polymer blends
Chapter 1 : Introduction I 9
Compared to dye molecules, appropriately synthesized semiconductorQDs offer wider
tunabilitywith narrower and more stablefluorescence. QDsare also particularlysuited forthe
near-IR region where the increased absorption is needed because organic dyes have poor
emission efficiencyin thatregion.20
The synthesis of colloidal nanocrystals is a special case of crystallization that yields
massivenumber of crystalsin solution with identical dimensions.The interest in QDsstarted in
the 1980s, but thefirst real success in their production was obtained using an organometallic
approach in coordinating solvent in the early 1990s.21 This approach originated from the
utilization of organometallic compounds in the formation of extremely high quality quantum
wells through metal organic chemical vapor deposition (MOCVD) methods. Organometallic
reactions are extremely sensitive to airand moisture due to high reactivity ofthe precursors.
The coordinatingsolvents are used to balancethe reactivityofthe
precursors.22 Toobtain high
qualitycrystallineQDs, it is generallyestablishedthat hightemperatureis required.
To date, most of the research on QDs for solar cell composites has focused on CdSe
since their synthesis is relatively straightforward and allows narrow distribution of QDs with
specific absorption.Otherresearchers havetried tofabricatecomposite devices using MEH-PPV
or P3HT. Their low efficiencies (<0.05%) can be mostly attributed to device fabrication.23,24 In
order to develop a general method for device preparation and characterization, CdSe QDs has
been investigated in combination with MEH-PPV. However, sincethe absorption ofthese QD is
similarto the polymerbandgap, onlya relativelyminorimprovement bycomparisonto thepure
polymer can beexpected.
Agreaterimprovementofthe photovoltaicperformance could beachieved through the
use oflll-V QDs, which havethe appropriate bandgap in the desired absorption. The quality of
QDs forlll-Vsemiconductors as well as theirsynthesis have not reached the same level as the
CdSe. Indium phosphide QDs wasthefirst lll-Vsystem to be synthesized through non-covalent
approaches.However, this system is extremely sensitive to air and moisture as well as to the
fatty
acids'
chain length. The non-coordinating approach has been studied thoroughly by
various groups for InP, but only by Battaglia et al. for
InAs.25
Organometallic approaches in
Chapter 1 : Introduction
I
10extreme toxicity, a special handling precaution hasto be taken.22
Although theviability of
QD-based polymer solar cellshas been described intheliterature, InAs QDshaveonly recentlybeen
shown to exhibitaphotoresponse inconjunctionwith nanocrystallineTi02films.26 InP and InAs
QDs will be investigated in organic solar cells. Due to the absorption peak of InAs, a sub-gap
conversion mayoccur.
1.4 Carbon Nanotubes
Dueto their unique properties, carbon nanotubes can be envisaged forvarious roles in
photovoltaic devices. Single wall carbon nanotubes (SWNT) have received, so far, the most
interestdue to theirsemi-conducting properties. SWNT's have been used aselectron acceptor
and electron extracting electrode in bulk heterojunctions.27
Multi-wall carbon nanotubes have
been used as the hole-extracting electrode, which has resulted in a reduction of series
resistance and an increase infillfactor.28
Growth of aligned arrays of carbon nanotubes on ITO may also be used as
three-dimensional holecollectingelectrodes. Bulkheterojunctions have partiallyresolvedthe issue of
the short exciton diffusion length in organicPV, however,thelowchargemobilityof conjugated
polymers remains a limiting effect. This low charge mobility may be improved by the
interpenetrating electrode, which extracts the charges more efficiently. Only recently have
aligned arraysof carbon nanotubesbeen used as largeelectrodesfororganic
Chapter 2 : Fullerenes 11
Chapter
2:
Fullerenes
2.1 Experimental
Two types offullerenes derivatives, C60 PCBM and C70 PCBM, were investigated as
electron acceptorsin bulk heterojunction. Bulk heterojunction nanostructureshave a direct
influence on device performance. For this reason, the effect of spin-speed, the type of
solvent, annealing(pre-postannealing), PCBM ratio and polymermolecularweighthas been
studiedfor MEH-PPVand P3HT.
Bulk heterojunction solar cells were fabricated following the sandwich structure
ITO/PEDOT:PSS/Active layer/AI illustrated in Figure 9. The glass substrate is coated with
indiumtinoxide(ITO) (Delta 7-10Q/sq), which is cleanedusinga 2stage ultrasoniccleaning
procedurewith acetone andisopropanol anddried.
Figure 9: Schematic layoutof abulkheterojunction
Poly(ethylene-dioxythiophene) doped with polystyrene-sulfonic acid (PEDOT:PSS)
wasthen spin-coated at3500-4500rpmtoobtainathicknesslayeraround 60to 80nm.The
PEDOT:PSS layer improved the surface quality as well as facilitated the hole
injection/extraction. Itis necessarytodrythe Pedot:PSSlayerat110Cfor1hourto remove
anywaterand reducefuture degradation.7
The active layer components are sonicated and mixed in the appropriate solvent
(DCB for P3HT and o-xylene for MEH-PPV) before spin-coating on top of the PEDOT:PSS
Chapter 2 : Fullerenes
I
12device degradation. For selected studies, post-annealing was performed on completed
devices in a glovebox using a hot plate. The back electrical contact was 1000 A of
evaporated aluminum andtheactiveareawas calculatedforcurrentdensitymeasurement.
The current-voltage curves were obtained using a Keithley 237 source-measure unit
and a Newport Oriel Instrument lightsource, calibrated underair mass 1.5(AMI.5)orAMO.
Spectral response was performed using an Optronic Laboratories instrument, calibrated
with a UV enhanced silicon detector. Refer to Appendix A forcharacterization calculations
and performance measurements.
2.2
Poly
(3-alkylthiophenes)
Poly(3-hexylthiophenes)composites with C60 PCBMare responsibleforthe recorded
power
efficiency.14
Figure10showsthedramaticeffect oftheaddition ofPCBMtoP3HTon
thedevicesperformances,which increasestheopencircuitvoltage and currentdensity.
V =519mV V =200mV
10"
10"
|
10^S? io5
Q *^
0 10
3 o
10-7
10*
I =5.34mA/arT I =1.51uA/cnf
sc sc f
FF=26% FF=39%
1
PCBM-P3HT
Pure P3HT
\ ^
-1.0 -0.5 0.0 0.5 1.0
[image:20.536.139.392.376.612.2]Voltage(V)
Figure 10: Effectoftheaddition ofC60 PCBMonthe current-voltage(l-V)curvefor P3HT
Spectral responseisusefulto investigate theabsorptionlimitation ofthedevices. From
Chapter 2 : Fullerenes
I
13eV which isconsistent withtheabsorption of each component.This isnot anidealcombination
consideringthat theoptimalenergy is 1.4eV.
LU
a
PEDOTPSS
ITO Glass 8c
CO -Q j
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Energy (eV)
Figure 11: Spectralresponse ofthecomposite and absorption of each component
Oneapproachtoobtaining an improved spectrummatchingwould includethe use of
a conjugated polymer with a largerabsorption inthe near-IR. The electrochemical bandgap
for poly(3-alkythiophenes) (P3AT) is slightly larger with an increased side chain
length7
(Figure 12)and therefore other P3ATs such as Poly(3-buthylthiophenes)(P3BT) and
Poly(3-octylthiophenes) (P30T)have been comparedto P3HT.
Energy(eV)
<fA1 =4.3
P3BT P3HT P30T PCBM
[image:21.536.96.444.84.341.2]Chapter 2 : Fullerenes
I
142.3.1 Poly(3-alkythiophenes)/C60 PCBMcomposites
As hypothesized by the bandgap increase, the open circuit voltage of the P30T
devices compared to P3HT is higher. However, the current density of the P30T devices is
significantly less (Figure 13). Since all devices were made using the same annealing
conditions (110C for 1 hour), it is possible these conditions were not optimal for P30T.
Longer chains increase the bandgap, while loweringthe absorption coefficient. Therefore,
the increased chain length produces a change in the optimal thickness and microstructure
neededtoabsorb mostofthelight7thatshould beoptimized.
10"
kp
10-E o
^
10"55 c <u Q
10-a> b
10"*
10'
PC
PC 3M-P3HT
BM-P30T
Jsc Voc F F
(mA/cm2) (mV) [<
P30T 0.00243 637 14
P3HT 5.34 519 26
-1.0 -0.5 0.0 0.5 10
Voltage (V)
Figure13: ComparisonbetweenP3HT: PCBM andP30T:PCBM (1:1ratio) Under AMO
As an alternative, poly(3-butylthiophenes) (P3BT) was considered in combination
with P30T. The bandgap of P3BT is lower than P3HT, therefore reducing theVoc. However
this reduced open circuit voltage may be increased by combining the P3BT with different
ratios of P30Tsuchas 1:1, 1:3 or3:1.The annealingtimewas lowered to30minutes based
on published studies showing a faster degradation for P3BT than for P3HT at high
temperature.29
The mostefficient P3HT:PCBM devicewas obtained usingthe30minutes annealing
time, however, all the devices hada lower efficiencythan the devicesmade using P3HT. In
[image:22.536.54.489.250.462.2]Chapter 2 : Fullerenes
I
15containing a larger portion of P30T have a higher open circuit voltage than the 3:1
P3BT:P30Twhich isconsistent withtheenergy bandalignment.
12.0 8.0 4.0 E E $ on </S 0.0 C (U a o 4.0 -8.0 -12.0 P3HT 1:1(P3BT:P30T) 3:1 (P3BT:P30T) 1:3(P3BT:P30T)
Iff
; "^^ ^f 30 25 20 ui 15 a LU 10 P3HT 1:1 (P3BT:P30T) -3:1 (P3BT:P30T) 1:3(P3BT:P30T)-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.E 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Voltage(V) Energy (eV)
[image:23.536.63.483.117.341.2](a) (b)
Figure 14:(a)CurrentDensitymeasurementsfor differentratios ofP3BT:P30TbycomparisontoP3HT. (1:1 P3AT:PCBMratiokeptconstant)underAMOand (b)spectral responseforthesame ratios.
Devices made of a combination of P3BT and P30T have better efficienciesthan the
pure P30Tdevices(Figure 14). Forthe compositecontainingthehigherpercentage ofP30T
(1:3 P3BT:P30T), the current density was 5.9
mA/cm2
compared to 2.43
uA/cm2 for the
P30T alone. On the other hand, the open circuit voltage decreased from 0.637 V to 0.4 V
dueto the addition ofP3BT.
2.3.2 Annealingandmolecular weight
Amongthe numerous research teams working on organicsolar cells, there does not
appearto be an agreed standard for theoptimal annealingconditionsfor P3HT:PCBM bulk
heterojunctions. The lack of agreement is caused by the wide variance in the polymer
regioregularity13 and chain
length29
which affects its charge mobility and annealing
Chapter 2 : Fullerenes 16
Low Mw P3HT has a limited photoresponse due to confinement ofthe conjugation
length. For Mw around 10,000 g/mol, P3HT forms crystalline nanorods, which exhibit low
charge mobility due to poor long-range interconnectivity of polymer chains. When P3HT
Mw is higher than 30,000 g/mol, it forms nano fibrils which are connected over long
distance (ca. 500 nm)which leadto an enhanced
mobility.29,31
Dueto itsrecord efficiencies, P3HThas becomethemoststudied polymer insolarcell
studies. A recentstudy comparingthe effect ofmolecular weight and performance of solar
cells suggestedtheobserved increasedhole mobility in P3HTcomparedto P3BT maybe due
to different molecularweight and polydispersityofthe P3BTsamples. Both P3BT and P3HT
have the same the re- re
stacking distance between their crystallized chains, however P3BT
packs more closely compared to P3HT across its interdigitated alkyl chains (1.26 nm and
1.64 nm respectively). Systematic study of the optimal annealing temperature for P3HT
samples with various molecular weight and polydispersity has shown that the overall
efficiency, as well as the optimal annealing temperature, increases with increasing
molecular
weight.29
Therefore, the synthesis and characterization of other
poly(3-alkylthiophenes) such as, P30T and P3BT, is not as optimal asfor P3HT. Alotof attention
has been givento the regioregularityofthe polymer, but onlylimited studies on the effect
of the molecular weight. Actual molecular weight may be the most important factor in
controlling annealingconditions and improvingchargetransfer.
The most typical effect of degradation in organic solar cells is the overgrowth of
PCBM crystals.3
Properties of P3AT diminish after over annealing due to a complete
segregation of P3AT into unconnected nanorods for polymers of lower masses. The
diminishing propertiesmayalso have been caused byelectrode degradation due the higher
temperature annealing required forhigh molecular weight materials. Polydisperse samples
enhanced the ability of the polymers to self-organize on annealing at optimized
temperatures.29
Studying the glass transition temperature of higher molecular weights P30T and
P3BT samples may give insight to the preparation conditions and optimal annealing
Chapter 2 : Fullerenes 17
Due to the higher devices performances with the P3HT system, a side-by-side
comparison of C60 and C70PCBM was conducted using this polymer. According to the
energy level alignment, using the C70 instead of the C60 creates more allowed
HUMO-LUMO transitionsandthereforeincreasesthecurrent
density.32 Energy(eV) Fullerenes 2.96 ~ i :4 Oito=4.7 : :5 :6 -3.7 339 t I t I <x !
CH-fj
i "1 5.49 6.1Oai=4.3
[image:25.536.41.452.440.662.2]P3HT C60PCBM C70 PCBM
Figure 15:Energylevelfor C60and70withP3HT
UsingtheC70PCBM resulted in increases inthecurrent densityandthe open circuit
voltage. Thisresult is consistentwith the differentenergy level ofC70and C60(Figure 15).
Annealingseemsto havethe same effect on both fullerenessincethefill factor is thesame in bothcases.
o E o < -0.8 -1.6 in -3.2 c <D Q 13 o -4 -4.8 -5.6 -[C70]PCBM-P3HT [C60]PCBM-P3HT
Jsc Voc FF
(mA/cm2) (mV) (%)
C60 4.91 478 42
C70 6.41 511 41
0.50
Voltage(V)
Chapter 2 : Fullerenes
I
18Thespectral response showsan enhanced quantumefficiencyintheregionbetween
1.6and 1.8eV as well as abroadershoulderin thehigh energyregion(Figure 17).
C60-P3HT
C70-P3HT
0.5 1.0 1.5
"5B
Z5 3~0 3~5Energy (eV)
Figure 17: Spectral response ofdevices made using C60 PCBM andC70 PCBM with P3HT(1:1 w/w). In
onset, theresponsefromtheC70isenhancedforthelower energy
Published times for annealing conditions vary considerably between groups as a
result of processing conditions and starting materials. Layer thickness of the active layer
variesfrom80 nmto 175 nm. Similar efficiencywasobtained when temperature annealing
rangesfrom 110Cto 158Cwithtimevarying between 2 minutes and 2hours.3,4'33There is no common agreement regarding what time interval the annealing should be performed.
Annealing priorto the aluminum deposition (pre-annealing) creates an even surfaceforthe
contacts. On theother hand, sincetheorganic layer is not protected yet by the aluminum,
degradationmaybe fasterthan afterthemetal deposition. Insomecase, pre-annealing may
not be necessary due to the equipment used for the contacts evaporation. Depending on
the equipment and the throwing distance, some evaporators will generate more heat and
therefore some pre-annealing may happen in the evaporator. Annealing afterthe contacts
deposition (post-annealing) is generally performed at highertemperature since the goal is
the recrystalization of the
polymer.33
Since these conditions vary between groups, both
techniques were investigated using a 0.8: 1 PCBM/P3HT ratio based on the improved
stabilityand high reproducibilityattained byMaet
al.3
Chapter 2 : Fullerenes
I
19from Rieke metals, and processing conditions described previously, the best-reward
combination included pre-annealing at 110C for 30 minutes under argon and
post-annealingonahotplatein a gloveboxat140Cfor30minutes.
PEDOT:PSS
ITOGlass
Jsc (mA/cm2)
Voc (mV)
FF n
(%i
Noannealing 2.22 385 48.5 0.41
Pre-annealing 4.05 452 47.0 0.86
Pre+ post annealing 5.06 570 51.4 . -:
E
o
-1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Voltage(V)
Figure 18: P3HT:PCBM(1:0.8) in DCBwith pre-annealingat110Cfor 30minutes under argon and post-annealingon ahotplateintheglovebox at140Cfor 30minutes.TestedunderAM 1.5
Theoretically, the Voc should decrease with annealing. During annealing the n-n
orbital interactions increase, resulting in heighted HOMO levels, and a reduced bandgap.29
In this study, the Vocwas increased during the first annealing as compared to the
non annealed devices. Annealing at this lowertemperature may have reduced the defects
attheinterfacewiththecontactsand provided a superior metal deposition. Post-annealing
was alsonecessarytoachieve highercurrentdensityaswellas a higheropencircuitvoltage.
Thefill factor(FF) value indicates the internal resistance towards chargesflow. The
improved FF with pre and post annealing suggest a reduction in defects and the formation
offibrilsduring recrystalization,allowingtheformationofpathwayforcharge
transport.31
Since annealingcauses phase segregation, a lower PCBM:P3HT ratio was chosen. In
theory in order to obtain an enhanced crystallinity, annealing should be performed higher
than the glasstransition temperature of 110C for P3HT.34
The improved crystallinity may
Chapter 2 : Fullerenes
I
20decreasewhilethefeaturesrelated tothepolymerincreases.Witha lowerratio,the carrier
transportbecame more efficient and carriertrappingissuppressed.35
In orderto further improve the performance of poly(alkyl-thiophenes) devices, the
effect of PCBM ratio in combination with annealing temperature should be investigated.
Since crystallization has a dramatic impact on charge transport, techniques such as XRD,
AFM and other characterization methodsmaybe usedto relatenanostructureorderingwith
annealing. Charge carrier mobility could also be studied usingfield effecttransistors (FET),
or other techniques to further investigate the effect of molecular weight and
regioregularity. P3ATswith longer alkyl chainsand highermolecularweight should beused
in ordertoincreasetheopen circuit voltagewhichcurrently limitsthepower efficiency.
2.3 MEH-PPV
Dueto the high efficiency devices obtained usingP3HT, little workhas been doneon
MEH-PPV. Based on the knowledge developed with P3HT, the same concepts of molecular
weight,solvent effects and thicknessoptimization were appliedforMEH-PPV.
2.3.1 Chain orientation andthickness
The increased electrical properties of devices afterannealing ofthe P3HT is due to
the enhanced packing parallel to the substrate after recrystalization which is observed for
regioregular
samples.13
Two factors strongly influence chains packing in MEH-PPV: the
solvent and the molecular weight ofthe polymer. When the polymeris spin-coated froma
solventcontainingbenzene rings,thechains will orient such astheside chains pointinwards
toward each other (Figure 19). Such orientation creates a highly ordered system. In
non-cyclic solvents, the chains will have a twisted conformation which does not favor close
Chapter 2 : Fullerenes
I
21(a) (b)
Figure19: MEH-PPVchain conformation whendeposited from(a)a solventcontainingabenzene ringand (b),withoutbenzene ring
The improved nanostructure created byusing a cyclicsolventhasa direct impacton
device performance as characterized by current-voltage measurements (Figure 20).
o-xylene was chosen as the aromatic solvent since it has been shown that it results in
better polymer chain stackingresultingin betterelectrical conduction 36
H I Cl
ci
Chloroform
4.0
Chloroform
-N . Xylene
I
2.0E
f
0.0c CD
Q
o
--4.0
--0.8 -0.4 0.0 0.4
Voltage (V)
Chapter 2 : Fullerenes
I
22A second parameter influencing the orientation of the chains is the molecular
weight. Most low molecular weight MEH-PPV have a random orientation of their chain
segments, whilethe highest Mwhave most oftheirchains parallel tothefilm plane. Similar
to P3HT, the parallel orientation of chains may benefit charge transport. The refractive index and the absorption coefficients are also increased due to the parallel chain
orientation.37
Using the same conditions with a 4:1 PCBM:MEH-PPV weight ratio, the efficiency obtained with higher molecular weight is more than double the efficiency
obtained fromthe lowestmolecular weight combination.
i2 55 0 n. d) Q -2 Low Mw Medium Mw " High Mw VI- ^--^^^ III -0.8 Mw Jsc (mA/cm2) Voc (mV) FF (%) 1 (%) Low
Mw: 40,000-70,000
2.07 747 36.0 0.57
Medium
Mw:70,000-100,000 1.88 808 37.4 0.57
High Mw: 150,000-250,000
3.89 835 38.5 1.25
0.8 -0.4 0.0 0.4
Voltage(V)
Figure 21: J-V Comparison ofMweffect on theperformance ofMEH-PPV:PCBM organic solar with a4:1
weight ratio(TestedunderAM1.5)
The same annealing was performed on all devices at low temperature. Annealing has been shownto deterioratethedevices' performances attemperatureaslowas50Cfor
30 minutes.Sincetheglasstransition temperaturefor MEH-PPV is 65 C38 bycomparisonto
110C for P3HT, lowertemperatureannealingshould beused.
Since the absorption coefficient is affected by the molecular weight, the optimal
thickness for effective chargetransport was studied. Spin-coatingspeed has a directeffect
on the performance of the devices due to the limited hole mobility in organic
semiconductors. From the current-voltage characteristic graph, the open circuit voltage
Chapter 2 : Fullerenes
I
23However, the current densities as well as the FF increase substantially with higher
speed, which correspondsto lowerthickness. The maximum efficiency was obtained when
thethicknesswas 130 nmas measured usinga contact profilometer.
3.0 2.0 OJ E o 5 1.0 E.
If
0.0 c Q c -1.0 0) O -2.0 -3.0 750rpm 1000rpm 1500rpm 2000rpm -Speed (rpm) Thickness (nm) Jsc (mA/cm2) Vce (mV) FF ( n %)750 230 1.29 775 27.4 0.27
1500 200 1.72 S02 32 6 0.45
2000 130 1.88 808 37.4 :.
V--1.0 -0.5 0.0 0.5 1.0
[image:31.536.34.498.88.316.2]Voltage(V)
Figure 22: l-Vcurves ofMEH:PPV-PCBM(1:4byweight)spin-coatedfromo-xylene atdifferentspeeds.
The improved chargetransferinthe polymer can alsobe observed usingthespectral
responsedata, where the peak associated with the polymer (around 2.4 eV) increases with
a decrease inthickness.
Z3 750rpm i
4
20 1500rpm 2000rpmT
-gl5
\\
"LU a uj 10 -l\ 5 n .. f^
1.0 1.5 2.0 2.5 3.0 3.5
Energy(eV)
4.0
Figure 23: Effect of spin-speed on External Quantum Efficiency (E.Q.E.) for MEH-PPV:PCBM (1:4 by
[image:31.536.31.393.420.636.2]Chapter 2 : Fullerenes
I
24This enhanced response from the polymer illustrates the holes mobility limitation.
For comparison, the featuresassociated with C60PCBM (around 3.5 eV) increase from 750
rpmto1500rpm butstayconstant whenthespeed isfurtherincreased.
Thehigherefficiencies are obtained with a thicknessof130 nm. Since annealing has
aneffectonthedistribution ofPCBMaggregates within the polymer,athickerfilmcould be
possible withoptimized PCBM ratio andannealing temperature.
2.3.2 Fullerenesoptimization
Deviceswerefabricated using C70 PCBM instead oftheC60 PCBM. Thiswasdoneto test
ifthe improved efficiencywould be similar towhatwas previously observed with P3HT. In
the case of MEH-PPV, the open-circuit voltage stayed constant, while the current density
was considerably increased bythe use ofC70 PCBM instead ofthe C60. The efficiencyfrom
C60toC70rosefrom 1.25%to2.06%whichis substantiallygreaterthan the P3HTresult.
w c Q c 0)
O 6
C60
4 C70
2 //
0
2 >w
4 >s
6
i i i i 1 i i ii
Jsc Voc FF n
(mA/cm2) (mV) (%) (%)
C60 3.89 835 38.5 1.25
C70 5.17 835 47.7 2.06
-0.8 -0.4 0.0 0.4 08
Voltage(V)
Figure24: l-Vcurvesfor MEH-PPVwithC60PCBMorC70 PCBM(1:4byweight).TestedunderAM1.5
Based on the metal-insulator model, the addition of C70 should result in an
increased open circuit voltage compared to the C60 basedontheir respectiveenergylevels
[image:32.536.43.492.366.579.2]Chapter 2 : Fullerenes
I
25energy of such systems should be investigated to understand the energytransfer process and the possible efficiency.
The effect ofPCBM ratio was also considered in orderto optimize the performance
of MEH-PPV devices. The 1:4 weight ratio between MEH-PPV and PCBM is considered standard for most groups.17,39,40
Based on the recent improved efficiency of P3HT devices due to lower PCBM content, the ratio was slightly lowered from 3 to 4 in order to find
optimal conditions. From Figure 25, the current density is almost the same for a 3.5 or 4 ratio, while it is significantly lowered for a ratio of 3. The Voc steadily decreases when
loweringthe PCBMratio.Theoptimal conditions arethen thestandard 1:4ratio. Additional
research would be requiredusingvariousannealingconditionstooptimizethePCBMratio.
1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Voltage(V)
Energy (eV)
[image:33.536.53.493.282.515.2](a) (b)
Figure 25: (a) l-V curves for different C70 ratio in MEH-PPV:PCBM devices (AM1.5) and (b) spectral
response
4.0
From the spectral response, the PCBM peak (~3.4 eV) decreases with increasing
PCBM ratio. The polymer peak (~2.5 eV) follows a different trend since it reaches a
maximumforthe 3.5 ratio. More interestingthan theobserved maximumofthe polymer is
LU
6
LU
Chapter 2 : Fullerenes 26
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
[image:34.536.165.417.53.266.2]Energy (eV)
Figure 26: MEH-PPV/C70optimal spectral response overlaid withtheAM 1.5spectrum
The effect of temperature on MEH-PPV has not been investigated to the same
extent as on P3HT. Preliminarydata on MEH-PPV indicateda decrease in performance and
degradation afteronly 30minutes at80 C. Howeverwith a higher molecular weight
MEH-PPV, an annealingstudycould be beneficial and allow higher efficiencydevices with higher
Chapter 3 : Quantum Dots 27
Chapter
3: Quantum Dots
3.1 Experimental
3.1.1 Covalentsynthesis ofCdSe QDs
CdSe quantum dots are the most widely known and studied system due to their
relatively simple synthesis and characterization. For this synthesis, 25.68 mg (0.2mmol) of
cadmium oxide was added with 227.6 mg of stearic acid (0.08 mmol) and 2.54 mL of
1-octadecene(ODE)toathreeneckflaskconnectedtoaSchlenklinefollowingtheestablished
protocol.41
Thesolution was pumped and purged 3 timesbefore raisingthe temperature to
200 Cto obtain a clear solution.Theflaskwas cooled to room temperature and 1.5 g (5.5
mmol)of octadecylamine(ODA) and 0.5 goftriocylphosphine oxide (TOPO)were addedto
thesystem and thoroughlydegassed.Thereaction mixture wasraised to280Cwhere2mL
ofcold stock solution was injected (1 M TOPSe previously prepared in the glovebox). The
reaction temperaturewas reduced to 250 C and holded forone hourto obtain largeQDs.
Theproduct was repeatedlywashedin aseparatoryfunnel usinghexaneand methanol until
a brighttoplayerwasobtained.
Since cappingagentsmaysuppressthechargetransferprocess, ligandexchangewas
performed on the QDs to replace the organic capping covering the nanoparticles with
pyridine.7, 22
Replacing the long chain fatty acid for a shorter element, such as pyridine,
allows asuperior contact between the donor and acceptormaterial.Afterprecipitation and
removal of the supernatant, a small amount of pyridine was added to the QDs, and the
mixture was sonicated for 10 minutes prior to precipitation by hexanes. The ligand
exchange was repeated 3 times before drying the QDs at 70 C. Thesame ligand exchange
processwasusedon allQDssystems priortodevice fabrication.
Deviceswerefabricated usinga 1:2 (MEH-PPV:CdSe)weight ratio ino-xylene. Forall
QDs, absorption spectra were performed on a Perkin Elmer Lamda 900 UV-VIS-NIR
Chapter 3 : Quantum Dots
I
28Fluorometer in orderto obtain information aboutthe electronic transitions (bandgap) and
thesizedistributionof nanocrystals.
3.1.2 Non-covalentsynthesis of InPnanocrystals
The colloidal synthesis was based on the non-covalent synthesis of lll-V QDs
developed byPeng.25
InP QDsarecurrently themostsensitivesystem to theligand lengthas
well asto the presence of air and oxygen. In a typical reaction, 29.2 mg of indium acetate
(0.1 mmol) was added to 68.5 mg of myristicacid (0.3 mmol) and 5 mL ofODE in a
three-neckflaskand heatedto 120C. Thesolution was pumped atthis temperaturefor 1 hourto
removeany moisture or airinthesystem.Afterrepeated pumpingandpurging,thereaction
flask was further heated to 300C under argon. At this temperature, a 2 mL solution
containing tris(trimethylsilyl)phosphine (P(TMS)3) was injected (12 ul of PTMS3 + 2 mL
anhydrous ODEwas prepared in the glovebox).Thetemperaturewas reducedto 270 C for
crystal growth and maintained for 30 minutes. The product was cleaned through a similar
technique usedforCdSe, while usingamixture of methanoland acetone (1:9)to precipitate
and hexaneto resuspend theQDs. Deviceswere prepared afterligand exchangeusing P3HT
with a1:1weight ratioin DCB.
3.1.3 Covalentsynthesis ofInAsnanocrystals
InAs QDs were synthesized following established procedures using
tris(trimethylsilyl)arsine with lnCI3. The synthesis of the tris(methylsilyl)arsine (As(TMS)3)
was adapted from
literature.42
In atypical synthesis, 1.7 g of sodium (73.5 mmol)wasfinely
cut and added with 29.4 mmol of arsenic and 70 mL of anhydrous toluene into a 3-neck
flask. The solution was heated to reflux while stirring for 48 hours. After cooling to room
temperature, 73.5 mmolofchlorotrimethylsilanewas added slowlyto the reactionflaskand
Chapter 3 : Quantum Dots 29
Afterfiltration, the resulting liquid wasdistilled to removethe excess tolueneor any
othervolatile byproducts. Dueto the high reactivityofthe precursors,theQDsynthesis was
conducted inthe glovebox. InAsQDswere prepared by injectinga lnCI3solution mixed with
As(TMS)3 into Trioctylphosphine (TOP) at 300 C, and the reaction flask was maintained at
260 C for growth43. Aliquots were taken at regular intervals and quenched in anhydrous
tolueneforcharacterization (fluorescence and absorption).The product was cleaned usinga
toluene/methanol precipitation technique followed by resuspension. The ln:As ratio was
varied during the initial mixing before injection. The photovoltaic devices were made by
dissolvingthe InAs QDs in asmall amountof 1,2-dichlorobenzene(DCB) beforebeingadded
in different mass ratiosto the MEH-PPVand the PCBM. The reference MEH-PPVdevicewas
madeusing 7.5 mg/mLMEH-PPV in o-xylene.Theweightratios ofMEH-PPVand PCBM were
kept constant at 1:4 while different ratios of InAs QDs were added to the composite. An
annealing stepat 110Cfor1hourunder argonfollowedthecomposite spin-coating.
3.2 CdSe Quantum dots
Due to their simple synthesis and focused size distribution, the first quantum dots
investigated were CdSe. The principal difference between bulkcrystals with an infinite size
and quantum dotswith afinal size is the surfaceatoms, which possessdangling bondsthat
must be stabilized. In colloidal synthesis, the nucleation takes place immediately after
injection and continues until the temperature andthe monomerconcentration drop below
a critical threshold. The nucleation kinetics is difficult to study. After nucleation, there are
two distinct kinetic regimes. First, during the focusing stage, the average nanocrystal size
increases relatively rapidly and the size distribution is focused. When all the monomer in
solution has been used for the QDs growth, the defocusing regime begins. The monomer
concentration is lower than the nanocrystals concentration. Therefore, the smaller
nanocrystals, which have the lower solubility, start shrinking and releasing monomer
through Ostwald ripening.Thebiggernanocrystalsusethe monomerinsolutionto continue
their growth, which results in a broadened size distribution. To minimize this effect,
Chapter 3 : Quantum Dots
I
30The biggest QDs that could be prepared using this technique had an absorption
around 2.1 eV. The repeated cleaning process has the advantage of removing most ofthe
smaller QDs from the solution therefore contributing to a smaller size distribution and
enhanced fluorescence. MEH-PPV was chosen as the conjugated polymer dueto its lower
absorption compared to P3HTwhich mayallowtheobservation ofsub-bandgap absorption
around 2.1 eV. The energy levels ofCdSe QDs andthe polymer are well aligned, therefore,
thedevices' performancesshould be improvedbytheaddition oftheQDs.
Energy (eV)
2.26
4 Oito=4.7
4.94
~\
3.32
*a,
=4.35.5- 5.78
MEH-PPV CdSe QD
Figure 27:Energylevel diagram for CdSe QD: MEH-PPVcomposites
Theaddition ofCdSe QDs increasesthecurrent densitywhen comparedto thepure
polymer. However, the performance ofthe reference device, a typical MEH-PPV:PCBM (1:4
weightratio), is still superiorin comparison to thecomposite containingtheQDs. Currently
onlytwo groups have published results for CdSe: MEH-PPV composite blends. In one case,
with a 90% wt of CdSe, the current density was approximately
2uA/cm2
with a Voc of
0.72V,24
while the other group used 80% wt of CdSe, and obtained current density of 2.6
uA/cm2
with a Voc of
0.58V.23
In both cases, the performances of the devices are
E o
E
w c Q) o
c
I
O
-1.1
-1.8
Chapter 3 : Quantum Dots
I
31MeH-PPV
MEH-PPV+QD(1:2)
MEH-PPV+PCBM (1:4)
0.0 0.2 0.4 0.6 0.8
Voltage(V)
[image:39.536.142.388.48.265.2]10 1.2
Figure 28: l-V curves for MEH-PPV with CdSe QDs and C60 PCBM in different ration. Tested
underAMO
Theaddition oftheCdSe QDsto thepure polymerincreased boththecurrentdensity
andthe open circuit-voltage.The currentdensitydifference between thedifferentgroupsis
most likelydue toefficientchargetransfer which is affected by ligand exchange. In theory,
the Vocshould be similar sincethe open circuit voltage should be a function oftheenergy
level ofthe materials in the composite3. Using differentsizes of quantum dots may slightly
change the quantum dots bandgap, therefore changing the Voc but not sufficiently to
explain a difference of 0.3 V between our measurements and those reported earlier.
Surface defects or partial shunting ofthe devices mayalso lower the open circuit voltage.
Considering that both the current density and the open circuit voltage were significantly
higherthanwhat was published byothergroups, indicates betterprocessingconditionsthat
wouldtherefore beappliedforother quantum dotscomposites.
The QDs' sizeis closeto the absorption edge ofthepolymer which results inthe
sub-bandgapabsorption not ableto bedirectlyobserved in thespectral response. However, the
QDs improve the charge dissociation since the entire spectral response curve is increased
and not onlythe region between 2 and 2.2 eV. In particular, the region between 3 and 3.8
Chapter 3 : Quantum Dots
I
322 2.5 3
[image:40.536.170.409.50.265.2]Energy (eV)
Figure 29: UV-visspectra oftheCdSe QDsused fortheMEH-PPV:CdSe QDscomposites withthe
ExternalQuantum Efficiency(E.Q.E.)ofthedifferentcomposites.
UsingQDs with lower energy absorption could result in sub-bandgap absorption. In
order to do so, new injection of precursors at low temperature would be necessary to
increasethe monomer concentration and therefore allowfurthergrowth oftheQDs. Since
the growth temperature is considerably lower than the injection temperature, this
techniquecan be appliedforCdSe withoutformationof new nuclei.
These devices were primarily prepared to establish a fabrication procedure for
composites devices made with QDs. This objective wassuccessfullyaccomplished sincethe
addition ofCdSe QDsafterligandexchangedemonstratedenhanced performance.
3.3 Indium Phosphide
Since indiumphosphideQDssynthesis issimplerthanotherlll-Vsystemssuch as InSb
or GaSb, they were synthesized first in preparation for the InAs QDs using a
non-coordinating solvent approach. Forthis technique, the reactivity of the monomers can be
tuned by varying the ligand concentrations in the non-coordinating solvents. This tunable
reactivity provides a way to balance nucleation and growth. This cannot be controlled by
Chapter 3 : Quantum Dots 33
temperaturefor lll-Vto provide high qualitycrystalline QDs.The optimal reaction involvesa
short and fast nucleation followed by a growth stage without new nucleation or ripening.
Too longof a nucleation period will resultin insufficient monomer left in solution toallow
sufficient QDs growth and therefore result in unstable
nanocrys