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InAs avalanche photodiodes as X-ray detectors

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Figure

Figure 1. (a) Wafer structure of the InAs APD, showing the thickness and doping concentration for eachlayer
Figure 2. (a) Reverse leakage current of packaged InAs APDs with 75 µm diameter at room temperature(solid lines) and 77 K (dashed lines)
Figure 4. (a) Spectra in channel numbers collected using APD D2 cooled to 77K, at reverse bias voltagesfrom 0.4 to 10.0 V
Figure 5. Energy spectra collected using the APD D2 cooled to 77 K, at reverse bias voltages from 0.4 to10.0 V.
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