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8-1-1990
Investigation of an in-situ method for determining
the modulation transfer function and its
applications in a microlithographic wafer stepper
Steven D. Carlson
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Recommended Citation
for
Dete.nninin:J
the
!b:iulation Transfer F\lrction
am
its Awlications
in
a Microli'thograt:hi.c wafer
ste~
by
steven D.
carlson
B. S.
Rcx::hester
Institute of
Tedmology
(1988)
A
thesis
su1::rni.ttErl
in
partial fulfillment
of the
requirements
for the
degree
of
Master of science
in
the
center for
Imagin:J
science
in
the College
of
GraIiric
Arts
am Rlotograp1y
of the
Rcx::hester
Institute of
Technology
August
1990
Signature of the Author
_
Jl.1"V"lOrrt-ori
by
Name Illegible
~ -
ROCHESTER
INSTI'IUI'E
OF
TEQiNOr.o:;y
ROCHESTER, NEW YORK
CERITFICJ-.TE OF APFRJVh.L
M.S. DEGREE THESIS
'Ihe M. S. Degree 'Ihesis of Steven D. carlson
has
been
examinEd
ard
approved
by
the thesis
COlllr."i:':t.e2
as
satisfactory
for the thesis requirement for the
V.aster of science degree
Mr. Bruce Smith, Thesis Advisor
Dr. Lynn Fuller
Dr.
Mehdi
lravani
cete
Title:
Investigation of an In-situ Methcd for Detennining the MOOulation
Transfer Function
am
its Applications
in a Microlithcgraphic
Wafer- stepper
Sy~
I,
,
hereby
gran': pennission to the
Wallace Mem:Jrial Library of R.
1.T.
to
reprcx:luce my thesis
in v.11ole or
in
part.
Any
reprcx:luction will not
be
for canmercial use or profit
l»~J
I
I
lj9D
MDOJLAnON
TRANSFER
FUNCTION
AND ITS APPLICATIONS IN A
MICROLTTHOGRAPHIC
WAFER STEPPER SYSTEM
by
Steven D.
Carlson
Submitted to the Center for
Imaging
Science
in
partialfulfillment
ofthe
requirementsfor the Master
ofScience
degree
atthe
Rochester Institute
ofTechnology
ABSTRACT
Research
into
characterization of wafer stepper systemshas
been done
primarily
by
analyzing
a series of wafer exposures.This
method
does
not allowfor
easy
separation ofthe
effects ofthe
exposuresystem and
the
resistprocessing
system.In addition,
determination
ofthe transfer
characteristics of projectionlithographic lenses
is
typically
done before the lens
systemis installed into
the
wafer stepper system.A
methodis
presented which allowsfor the
in-situ determination
of
the
modulationtransfer function.
This
method separatesthe
processing
effects
from
those
ofthe
exposure system.Scattered
light from
a polysil icon
edgeis
shownto be
in
closeagreement with
the theoretical MTF
as calculatedby
SAMPLE.
Focus
effectson
the
resultantMTF
curves aredemonstrated.
A
comparisonbetween
singleand multiple
scattering lines demonstrates that there
is
little
difference
in
the MTF
curves.The
author wouldlike to
express appreciationfor
those
who
have helped
in
this
project.Special thanks
aredue
my
parentsfor
much support andpatience,
Brad Carlson
and
Judy
Dubois
for helpful
comments onthe
text,
Mike
Chen
for
equipmenthelp,
andPeg
Wedge
for
much needed moral support.Equipment
was providedby
Optical
Chapter 1.
Introduction
1.2
Objectives
Chapter
2.
Methods
2.2
2.3
2.4
Reticle Design
andFabrication
Wafer Target Fabrication
Detector
2.5
Data Collection
2.6
2.7
Edge Response Analysis
Focus Effects
2.8
Statistical Treatment
ofData
Chapter 3.
Results
3.2
Repeatability
3.3
Poly
Edge
Scattering
3.4
Aluminum Reflection
3.5
Single
vs.Multiple
Lines
3.6
Focus
Effects
Chapter
4.
Discussion
Chapter
5.
Conclusions
andRecommendations
References
Appendix A
Amplifier Circuit Diagrams
Appendix B
Tatians
method equationsAppendix
C
Sample
ofMTF
programAppendix D
Sample
ofMTF
data
In
the design
and manufacture ofdiffraction limited
state ofthe
artlens
systems usedin
microlithographicsteppers,
many
studieshave been
done
to
evaluatethe
lens
performance. 'There
are
many
factors
which couldpossibly
affectthe
performance ofthese lenses
after
they
are mountedin
the
stepper systemitself.
Some
ofthese
are mechanical while others are environmental.
In
orderto
evaluate stepperperformance,
the
traditional
approach centers on a matrix of wafer exposures and subsequent
analysis.
The
purpose ofthis
matrixis
to determine the
stepper systemcharacteristics such as
exposure,
best
focus,
overlay
information,
andbaseline
correction.Such
methods areheavily
dependent
onthe
exposure and
development
characteristics ofthe
resist.This
introduces the
combined effects ofboth the
projection system andthe
recording
systeminto
the the
final
image.
While
much workhas
been
done to
characterize stepper systems asaccurately
andefficiently
as57
possible
using these
methods,
little
has
been
done to
determine
This
is
due to the
difficulty
in separating
the lens transfer
function
from
the
chemical and physical spreadfunction
contributionsin
the
resulting
developed
image.
Recently,
a newtechnique
has
been
introduced
which allowsmany
ofthe
stepper variablesto be
characterizedin-situ
withoutthe
need
for processing
ofany
exposed wafers.The
method employed usesa variation of edge gradient analysis
commonly
usedin
evaluation ofimages
and photographic systems.The technique
uses a matrix oflines
on a
target
waferto
scatterlight
asit
is
scanned acrossthe
aprojected aperture.
The
resulting
aerialimage
intensity
profileis
plotted.
Best
focus,
overlay
error,
and other parameters arecalculated
by
comparing
the
shape andlocation
ofthe
profiles asmachine variables are changed.
Additionally,
knowledge
ofthe
steppersystem
MTF
would contributeto the
overallunderstanding
of stepperperformance.
The Modulation Transfer
Function
is
defined
asthe
ratioof
image
modulationto
object modulation as afunction
offrequency.
Since the
aerialimage
intensity
profileis
sampled, this
distribution
can
be
usedto
calculate an estimate ofthe
systemMTF
by
using
Tatians
method.8
Tatians
method applies aFourier
transform
algorithmto the
sampled aerial
image.
By
using
several substrate materials andscattering
geometries,
anunderstanding
ofthe
applicability in using
The
edge spread response andMTF
are appropriate quantitiesto
measurein
microlithographic applications.This
is
because
imaging
is
of extended rectangular objects andthe
parameterdetermining
imagability
in
the
photoresist material or systemis
the
aerialimage
contrast at
the
wafer plane.Since
rectangular objects arebeing
imaged,
the
ability
ofthe
projection systemto
accurately
image
anedge
is
ofprimary
importance.
The
MTF
canbe
usedto
estimatethe
practical resolution
by
relating
image
modulation vs.frequency
to the
resist system
to
be
used.The
contrast ofthe
resist system used willdetermine
the
practical resolution ofthe
system.The
resolutionlimits
for
projectionlithographic
systems are estimatedby kX/NA,
where
k
is
a processdependent
factor,
?<.
is
the
illuminating
wavelength,
andNA
is
the
projectionlens
numerical aperture.The
Q
value of
k
canbe influenced
by
a number of process considerations.It
is
generally taken
as .8for
general production applications and .6for
research environments.Multilevel
resist systems and advancedprocessing
techniques
can extendthe
value ofk
to
.5, whichcorresponds
to the
diffraction
limit
ofthe
projectionsystem,
orlower
In
orderto
determine
the
edgeresponse,
a numericalrepresentation of
the
aerialimage
intensity
is
obtainedby
stepping
anedge across
the
image
andcollecting
the
scattered or reflectedlight.
The
collectedintensity
willbe
highly
dependent
onthe
scattering
orreflective properties of
the
target,
the
geometries ofthe
target,
andorientation relative
to the
aerialimage.
In
orderto
ensurethat
noadditional modulation of
the
image
is
addedby
the
scanning process,
the
exposedreflecting
surfacearea,
as seenby
the
object,
mustbe
smaller
than the step
sizein
the
direction
of scanning. 'There
are several methodsby
whichthe
edge responsemay be
determined.
Among
these
arescattering
and reflection.Scattering
uses a
relatively
rough surfaceto
scatterlight
whilethe
relatively
smooth
surrounding
surface will not.In
this
way, the
rough edge canbe
stepped across animage
andthe
scatteredintensity
recorded.Reflection
usesthe
reflectivity
difference
between
two
adjacentmaterials.
The
highly
reflective material will reflectlight
at someangle given
by
its
edge profile.If
this
materialis
ontop
of anon-reflecting
material,
orthere
is
no edge profile atthe
correctangle,
the
detected
intensity
willbe
a result ofonly
the
light
reflected
from the
highly
reflecting
edge.Both
methods will resultin
The
effect offocus
position areimportant in
determining
the
practical resolution of a particular system.Surface
topography
caninfluence
the
ultimate resolution of a system.If
surfacefeatures
areof a
height
closeto the depth
offocus
of asystem, the
imageability
of
the
resist system willbe different
atthe
top
ofthe
feature than
atthe
bottom.
The
focus
effectis
criticalto the
understanding
ofhow
a system will respondto
these
topographical
changes.An
examination of
the behavior
ofthe
MTF
as afunction
offocus may lead
1.2
OBJECTIVES
The
objective ofthis
projectis
to
develop
anin-situ
methodfor
determining
systemMTF.
The
method employed will useTatians
method ofcalculating
the
MTF
from
a sampledintensity
distribution
orEdge
Spread
Function
(ESF).
The
effects of various substratematerials,
processing
schemes,
and geometries onthe
resulting
profiles andMTF
curves willbe
evaluated as comparedto
the
theoretical
MTF
values asdetermined
by
SAMPLE.
The
effects ofdefocus
onthe
resultant
MTF
willbe
analyzed.Benefits
to
resolution and selection of resist materialsbased
on results willbe
demonstrated.
In
addition,
a comparison ofMTF
values as afunction
of ambient2.1
GENERAL
SYSTEM
PARAMETERS
The
stepper system usedfor these
experiments was aGCA
4800
with a .28 numerical aperture
lens.
In
the
steppersetup,
amercury
arc
illumination
source providesthe
appropriate wavelength.The
projection
lens
systemis
highly
corrected at435.8
nm.This
corresponds
to
the
G
emissionline
ofHg.
The
output spectrum ofillumination
systemis
shownin
Figure
2.1
300 360 400 460 *0C 60 600 660 700
Wavelength
(n\
Figure
2.1
A
condenserlens
system providesfor
a collimated source atthe
object plane.At
the
objectplane,
a reticledefining
the image
is
placed.
This
reticle patternis imaged
through the
projectionlens
onto
the
wafer plane.The
lens
is
a10X
reductionlens.
A
set ofreticles were used
to
patternthe
target
wafers.These
reticlesprovided several
different linewidths
and sets oflines.
The
different
combinations provided several
scattering
orreflecting
geometries.A
different
set of reticles were usedto
providethe
object apertures.The
apertures werelocated
atthe
center andthe
edge ofthe
field.
2.2
RETICLE
DESIGN AND
FABRICATION
All reticle
designs
were executedusing
aCAD
system(RIT's
ICE
orIntegrated Circuit
Editor.15)
The
reticles werefabricated
ona pattern generator.
The
reticles were emulsion masks processedusing
The
object reticleshad
variousdesigns
consisting
of singlelines
and severallines
together.
The
singlelines
were placed atboth
the
center andthe
edge ofthe
field.
The
set of severallines
wereplaced
in
the
center ofthe
field.
The
purpose ofthis
design
wasto
see
the
effect onthe
MTF
ofusing
severallines
to
increase
the
signal.
The
fiducial
marks were essentialto
insure
that there
was norotation.
The
reticles usedto
makethe target
wafers consisted ofsingle and groups of
lines
also.In
the
case of groups oflines,
the
pitch was
designed to
matchexactly
withthat
ofthe
object reticle.2.3
WAFER
TARGET
FABRICATION
Each
target
wafer containstwo
alignment chips.These
areessential
to
insure
that there
is
minimal rotation with respectto
the
object's
image.
Several
different target
wafers were prepared.First
a
test
wafer with5000
angstroms of oxide on silicon was usedto
seeif
there
wasany
collectedlight
with notopography.
In addition, lines
were etched
into
the
oxideto
test
the degree
of scatterusing just
the
oxide geometries. Aluminum on oxide on silicon was prepared
to test
the
resultsdue to
the reflectivity
difference
between the
aluminum and2.
Methods
single and multiple
lines
were used.Finally,
polysilicon on oxide wasused
to test the
resultsdue to
scattering.In
this
configuration,
the
light
will scatter offthe
rough polysilicon whileit
will notfrom the
oxide.
Again
both
single and multiplelines
were used.All
target
wafers wereimaged
using
KTI
820
resist.Resist thickness
was
approximately
L2
microns.Minimal
overetch wasdone because the
etching
process was aggresive enoughto completely
clearthe target
lines
imaged
atapproximately
1
micronin
width.The
intensity
ofthe
scattered
light
washighly
dependent
onthe
presence or absence ofparticulates on
the
wafer surface.Because
ofthis
an attempt was madekeep
the target
wafers as clean as possible.Also,
if
any scattering
was
detected
due to
particles,
another site was chosen onthe target
wafer.
2.4
DETECTOR
The
detector
used was anEG & G
model450
radiometerfitted
with a
550-2
probe.The
probe was mounted offthe
wafer stage andadjusted so
that
the
maximum amount oflight
was collected.Due
to the
design
ofthe
steppersystem,
the
probehad to be
mounted at alow
angle with respect
to the
wafer stage.The
steppersetup
alsodid
notallow
the detector
probeto be
mounted onthe
wafer stage sothat the
angle
between the
edge andthe
probe would remain constant asthe
stageMethods
the
linearity
ofthe
detector
asthe
wafer stage movementtotaled
5
microns.
The
probehead
washeld between 11
and13
degrees
for
maximumresponse
depending
onthe
wafer material.The
total
stagemovement resulted
in
less
than
0.005
degree
changein
angle ofincidence.
This
is
wellbelow
the
1
degree
field
neededto
ensurelinearity
of response.The
setup
is
shownin
Figure
2.2.
.,
MASK
LENS
AERIAL
IMAGE
XL
DETECTOR
WAFER
STAGE
Figure
2.2
Methods
The
measured response wasin
uwatt/cm2with maximum
resolution
being
5xlO-11uwatVcm2.
The
12nm
bandwidth
filter
centered on
the
Hg
g-line of435.8nm
allowsonly
reflected or scatteredlight from the
sourceto be
collectedbecause the
chamber was maskedto
eliminate all sources of
stray light.
In
orderto
provide maximummachine
stability,
a15
minutewarmup
cycle was addedto
eachdata
collection cycle.
The
amplifier circuitis
atransimpedence
amplifierwith no reverse
bias.
This
configuration maintains a constant voltageacross
the
photodiodejunction
andthus
increases
the
circuitlinearity.
This
circuit also resultsin increased
speed as comparedto
conventional resistive
load
amplifier circuits usedin
radiometers.In
addition, the
noiseintroduced from the
photodiode and amplifieris
minimized.
The
amplifier circuits are shownin
appendixA.
2.5
DATA
COLLECTION
The
exposuretime
was set at4
seconds anddata
recorded asthe
wafer stage was stepped acrossthe
aerialimage.
This
providedfor
the reading to
stabilizebetween
steps andopening
ofthe
shutter.For
each
run, data
was recordedfor
intensity
at eachstep,
focus position,
and ambient
barometric
pressure.Also
recorded wasthe
backround
intensity
if
any.There
was attimes
a smallbackround
reading
from
2.
Methods
were
located
offthe
edge and were presentduring
the
entire scanin
the
illuminated
aperturearea, the data
was stilltaken.
This
had
noeffect on
the MTF
curve andsimply
added a positivebias to the
edgeprofile.
2.6
EDGE
RESPONSE
ANALYSIS
Several
methodshave been demonstrated that
involve
use ofthe
the
sampling
theorem
in
the
computation ofthe
transfer
function.
'These
methods were
developed for
usein
photographicanalysis
involving
microdensitometertechniques.
These
methods werefound
to
be
highly
sensitiveto
noise.Since
these
techniques
typically
involve
determining
the
edge spreadby
analyzing the
images
themselves,
much ofthis
noiseis
a result ofthe
recording
film.
Such factors
as grain sizedistribution
overthe
aperature area andthe
nature of
dispersity
in
the
emulsion contributeto the
overall noisequantity.
In
addition,
there
also neededto
be
correctionfactors
introduced
to
accountfor
microdensitometer nonlinearitiesbecause
ofsuch
variables.21-23
These
edge response measurements are analogousto measuring the
exposure matrix ofthe
waferbecause
they
allinvolve
measurement of
the
resultantimage.
The
edge responsetechnique
proposed measures
the
edge response ofthe
aerialimage
usedto
form
2.
Methods
associated with
the
imaged
material.This
reflectsthe
response ofthe
projection system
only
withoutthe
additional variables ofthe
resistsystem and processing.
In
each experimentalrun,
a stepperjob
was writtento step
the
waferstage across
the
aerialimage.
Initially
the
runs weredone
withthe
object
in
the
middle ofthe
field.
Each
ofthe three
materials weretested
with a singleline.
Oxide
onoxide,
polysilicon onoxide,
andaluminum on oxide
lines
were stepped across a15
micron wide aperture.To
establishrepeatability,
a series of runsusing the
same polysiliconline
was completedduring
a singleday
anddone
again aday
later.
Several
runs weredone
withthe
aperture atthe
edge ofthe
field.
This
wasdone to
establish whether or not adifference
couldbe
detected
in
the
MTF
due to field
position.Another
series wasdone
using
multiplelines.
This
wasdone
in
an attemptto boost
the
signalstrength
by
collecting the
radiationfrom
severallines
instead
ofjust
one.
The
reticles andthe
target
wafers weredesigned
sothat the
edge of each
scattering
orreflecting line
matchedexactly
withits
corresponding
aperture.The
setup showing the relationship
between
the
1.
Introduction
f),
fl,
,, ,ft,
-<
?
r<Figure
2.3
2.
Methods
Each
data
collection run resultedin
the
production of anedge response vs. wafer stage position.
This
edge response was plottedand
the
valuesinput into
aFORTRAN
programto determine the
MTF
plot.The
program usesTatians
methodto determine
the MTF.
The MTF
is
found
by
taking
the
magnitude ofthe Optical Transfer Function.
The
equationsdeveloped
by
Tatian
have
been
simplified24and can
be
found
in
Appendix
B.
The
MTF
is
plotted as afunction
offrequency
(in
cycles permillimeter).
The
program normalizesthe
data
and computesthe
MTF
to
a user specified spatial or
temporal
frequency.
A
sample ofthe
program used
is
containedin
appendixC.
2.7
THE
EFFECTS
OF
FOCUS
The
shape ofthe
aerialimage
intensity
profiledetermines
the resulting
MTF
curve.Introducing
defocus
resultsin
adecrease
in
the
slope ofthe
edgeresponse.25
Resolution
anddepth
offocus
aretypically
described
in
terms
ofthe
Rayleigh
criterion.26The
expression
for
resolutionis
givenby
R
=2.
Methods
The
resolution canbe
relatedto the MTF
by determining
the
minimummodulation of a photoresist system needed
to
produce animage.
This
will correspond
to
a resolutionin
terms
of cycles/mm.The
minimummodulation required
for
a particular resist systemto
image
is
determined
by
the
Critical
Modulation
Transfer
Function
(CMTF).
The
CMTF
is
defined
by
[luVJ-i]
/ rio^+l]
(2)
where
%
is
the
contrast ofthe
resist system.The
Rayleigh
depth
offocus
is
givenby
DOF
=b\/
(NA)Z(3)
The
values ofk
andb
are processdependent
variablesthat
canvary
with
the
processbeing
used.The
effects ofthe
resist system are alllumped into these
values.These
traditional
methodsadequately
describe lithographic
systemswhere
the
resistthickness
is
consideredto
be less than the depth
offocus for the
projectionsystem.27
In
many
modernapplications, the
imaging
layer
is
closeto
orless than the
thickness
corresponding
to
the
projection systemdepth
offocus.
This
may
be
because
of1.
Introduction
resolution.
Recent
studieshave
shownthat the
photoresist repsonseis
closely
relatedto
the
log
ofthe
slope ofthe
aerialimage
intensity. '-:y
The
aerialimage
intensity
creates a chemicaldistribution function
in
the
resist.It
is
this
distribution that
actsas
the
latent
image.
The
latent
image
slopeis
proportionalto the
slope of
the
log
ofthe
aerialimage intensity.
It
is
this
relationship
that
is
usedto
determine
practical resolution of a systemin
severalOf) TT
studies and simulations. '
Because
the
MTF,
asdetermined
by
Tatians
method,
is
dependent
onthe
aerialimage
profile,
this
dependency
onthe
slopeis inherent in
the
result.The
effects ofdefocus
on practical resolution canbe
determined
by
examining the
modulation needed
for
a particular systemto
image.
The
modulationfor
a particular resist
system,
givenby
the
CMTF
value,
canbe
relatedto
resolution expressed
in
cycles/mmby
examination ofthe
MTF
curves vs.2.
Methods
The
focus setting
ofthe GCA 4800
is
a valuein
GCA
units.Each
GCA
unitis
equalto 0.25
microns.Thus,
for
adefocus
of1.25
microns
to
be
added,
5
mustbe
added or subtractedfrom
the
focus
value.
Using
atypical
valuefor
b
of .7,the
depth
offocus
asdetermined
by
the Rayleigh
criterionis
+/-3.891
microns.
To
minimizethe
effects onfocus from lens
heating,
the
manual shutter was openedfor
15
minutesbefore the first
experimental runs.2.8
STATISTICAL TREATMENT
OF
DATA
Since
the
primary
interest
in
the
MTF
from
a practicalresolution standpoint
is
the
frequency
at a particularmodulation, the
statistical
tests
weredone
at several contrast values.A
convenientvalue of modulation
to
useis
0.4.
This
is
a valuethat
is
usually
close
to the
minimal value neededfor
consistentimageability
in
the
photoresist system.A
modulation of0.4
correspondsto
a of2.71.
The
tests
canbe
appliedto the
values ofthe
resultantMTF
curvesinstead
ofthe
values ofthe
edge responsebecause the
MTF
is
notempirically derived from the
edge spreadresponse.32'33
Significance
testing
was alsodone to determine the effect,
if
any,
ofthe
changein
barometric
pressure onthe
resultantMTF
Chapter 3. Results
An
example ofthe
theoretical
MTF
determined
by
SAMPLE
(Simulation
And
Modeling
ofProfiles
in
Lithography
andEtching)
is
shown
in
Figure 3.L
The
program solvesfor the
aerialimage
intensity
using
a combination of numerical and analyticalintegration.
The
integrals
aredetermined
using
Hopkins'transmission
crosscoefficients.
These
coefficients are usedto
weightthe
Fourier
tranform
ofthe
objecttransmission
based
onthe
pupilfunction
anddefocus.34'35 I... ^
\
i.iZ' *-\.t.r.-\
t.i'.--; * I.H- t.u-| .** 0 ..3=1 n ; iI
t.r1 ,nI.I5J
.i4"I
I.KJ I -i.e._,.J j. -'. J. .1
' ' '
>i
i^mmiitm^miitm^mm m m m m m ..* u nt u-.Figure
3.1
3.
Results
Tests
ofthe
silicondioxide
showedthat
there
was noreflection at
the
angle ofdetection.
The
lines that
were etchedinto
the
oxide provided noscattering
or reflection.This
is
expected giventhe
nonreflecting
properties ofthe
silicondioxide
layer.
As
expected,
particulates onthe
wafer surface provided reflected andscattered
intensity.
These
particles werekept
at a minimumby
cleaning
the
wafers.If,
however,
particles are presentin
the scan,
it is
determined
whether or notthe
particlelies
in
the
aperture areaduring
the
entire scan.If
it
does,
it
simply
adds a positivebias to
the
intensity
profile.This
does
not affectthe
determination
ofthe
MTF
because the
program normalizesthe data.
If the
particleis
notin
the
aperture areaduring
the
entirescan,
then
adifferent
scanning
location
is
chosen.3.2
REPEATABILITY
OF
RESULTS
A
series offive
runs was usedto determine
repeatability.An
additional series was run onthe
following
day.
A
sample ofthe
resulting
aerialimage
profileis
shownin
Figure
3.2.
The
MTF
curvesfrom these
edge profiles are shownin
Figures
3.3
and3.4.
Examples
ofthe
aerialimage
data
andthe MTF data
canbe found
in
Appendix
D.
A
Results
The
aerialimage
intensity
profile
ofthe
aperture
is
shownbelow.
All
runs werecompleted
after alens
warmup
cycle of15
minutes.
It
has
been
shown
that
lens
heating
affectsbest
focus
position
6
andthis
warmup
time
allowsfor
asteady
state conditionto
minimizefocal
shift.This
wasdeemed
necessary
because
ofthe
long
exposure
times
between
stepsfor data
collection.Aerial
image
intensity
profile
160
eell*et*6 Intantlty (jiW)
0
i
Dlaltnoe x >
Figure
3.2
3.
Results
The MTF
curvesfrom
day
one were calculatedfrom
five
runsdone
overthe
course of severalhours.
The
barometric
pressure was29.63.
The
curves ofFigure
3.3
have
an average spatialfrequency
of579.6
cycles/mm at a contrast of0.4.
The
standarddeviation
is
12.32.
This
represents an average of .862 microns with a standarddeviation
of .017 microns.The
second set of curves are shownbelow.
The
barometric
pressure was29.65.
A
third
set of curves were3.
Results
tr
'wo <w
Lj
*-^ wU
'- u k_or,::
p~.
e:ce
scc'vie* <*?' Iw400
E?~
CucLes/r-CJj
Figure
3.3
3.
Results
Figure
3.4
3.
Results
The
MTF
curves ofFigure
3.4
have
an average of587.4
cycles/mm with a standard
deviation
of11.94
at a contrast of0.4
This
is
equivalentto
.851 microns and a standarddeviation
of .0167microns.
The
averagefor the
curves calculated at a pressure of30.5
is
574.S
cycles/mm with a standarddeviation
of13.99.
The
curves aresimilar
to
Figures
3.3
and3.4.
To
test
if
there
is
any
statisticaldifference between the
sets ofcurves, tests
for both
the
differences
37 "}R
in
the
means and variance ofthe
sets aredone.
'To
test
for
the
differences
in
the
mean,
the t distribution
is
used.t
xl-x2 / nl + n2
(6)
/
z i~~
v
sl(nl-l)
+s2(n2-l)
Tne
F
distribution
is
usedto
test
the
difference
in
variance.
The
F
statisticis
computedby
equation(7)
F
=si2/
S2?
3.
Results
The
nullhypotheses
arethat
there
is
nodifference
between
either
the
means orthe
variances.For the
repeatability
from
oneday
to the
nextusing
the
samesetup,
the
calculatedt
statisticis
1.016.
The
test
statistic with nl+n2-2degrees
offreedom is
3.355
atthe
99
%
confidence
level.
Since
1.016
is
not greaterthan
3.355
it
is
concluded
that there
is
no significantdifference
between the
means ofthe two days trials.
The
F
statisticfor the
sametwo
sets of curvesis
calculatedto
be
1.064.
The
test
statisticis
16.00
for
nl-1 andn2-l
degrees
offreedom.
Again,
it is
concludedthat there
is
nosignificant
difference between the two
sets of curves at a contrast of0.4.
The
same procedureis
followed to determine the
effect of achange
in
barometric
pressure onthe
MTF
curves.The
valuesfor the
set of curves at
the
high
pressureis
comparedto those from the
lowest
pressure.
The
t
statisticis
calculatedto
be
1.62.
It
is
concludedthat
atthe
99
%
confidencelevel
that
there
is
nodifference
in
the
two
means.The
F
statisticis
calculatedto be
1.37.
It
is
concludedthat
there
is
nodifference
between
the
variances.These
resultsindicate
that the test
is
not sensitive enoughto
detect differences
due to
changesin
the
barometric
pressure.It
has been
shownthat
the
TO
position of
best
focus
changes with changes in pressure. 3In this
application
this
changemay be
well withinthe
depth
offocus
ofthe
3.
Results
3.3
POLY
EDGE
SCATTERING
Figure 3.5
comparesthe theoretical
MTF
curve asdetermined
by
SAMPLE,
with one obtainedexperimentally
using
poly
edgescattering.
The
experimental curve shows good agreement withthe
theoretical
curve.The
differences between the two
couldpossibly be
the
result of some small rotationbetween
aperture andthe
scattering
lines
and slightdifferences
in
the poly
edge profile.Both
ofthese
situations will serve
to
decrease the
slope ofthe
aerialimage
andtherefore
increase
the
modulation at a given spatialfrequency.
Noise
introduced
by
these
factors
atthe
beginning
and end ofthe
edgeprofiles
is
shownprimarily
by
the
response athigh
spatial
t.fr-6.if
t.T I
i.'y~
i.i'.'-3.
Results
Theoce'taoA
5
i.t'r
\
/
enpeOMwtaA
\
^\\
>.
XX
x
*-Y^
?* :* !?* :- 3" ? }5 -*r = 5*> 55* ?f 6r* 7M 7Se Wt = *< Mt lWl*f!! i:5r:*?*
Figure
3.5
3.
Results
3.4
ALUMINUM
REFLECTION
The
curve shownin
Figure
3.6
is
the
MTF
from
the
edgeresponse of a metal
line
on oxide.The
reflectedintensity
is
plottedand compared
to the
scatteredintensity
from the poly line.
The
edgeresponse shows a
greatly
reduced slope as comparedto the
poly
edgeresponse.
There
are severalfactors that
contributeto the
greatly
increased
modulation.Because
the detector
is
mounted at such alow
angle with respect
to the
waferplane, the
aluminum wouldhave to have
a specific sidewall angle.
This
angle wouldbe determined
by
the
angleof
the
detector.
The
aluminumlayer
wasapproximately
3000
angstromsin
thickness.
The
alumiunumlines
wereisotropcally
etched andtherefore did
nothave
a well controlled sidewall angle.The
width ofthe
aluminum as seenfrom the
perpendicular axis was greaterthan the
step
size ofthe
wafer stage.This
introduces
a modulationto the
edgeresponse
function.
The
situationis
analogousto
having
adetector
3.
Results
NTT
curve;
metoL
line
C
U
C
u6
S
/Figure
3.6
3.
Results
3.5
SINGLE
VS.
MULTIPLE
LINES
Figure
3.7
comparesthe
MTF
curvesfor
both
single andmultiple aluminum
lines.
IT
r
curves;
netc
i^ LHiSingle
vs.
multiple
L^nes
cycles/mm
Figure
3.7
3.
Results
Figure 3^
showsthe
comparison
between
single and multiplelines
using poly
scattering.
Aluminum
andpoly
MTF
curves showthat
there
is
goodagreement
between the
responsefor
single and multiplelines
atlower
spatial
frequencies.
The
differences
atthe
higher
frequencies
are aresult of
decreased
slopein
the tails
ofthe
edge response.This
is
as expected
due to the
variationsin
linewidth
ofthe scattering
orreflecting
lines.
Because
ofthis
variation,
the
scattering
orreflection
does
notbegin
atthe
samelocation fcr the different lines.
Tne
net result ofthis
is
astretching
out ofthe
two
ends ofthe
edgec o
TJ O
X
3.
Results
^/q^r-1
i
j.r
curve
o^
c
;
_x,
o c
1
1
^G_
v.'<= . r,
h
:nese:;
b:
'^ >wL- CO.
Figure
3.8
3.
Results
Aerial
image
intensity
profile
160
eei\te\C InllniI ty (yW)
Diatance x
jim
Figure
3.9
3.
Results
An
alternate method ofboosting
signal strengthis
to
increase
the
length
ofthe
scattering
lines.
Figure
3.10
shows acomparison of
the two
edge responsesfrom two different length
lines.
The
resultantMTF
curves arevery
close.The
MTF
curves are shownin
Results
Aerial
image
cf
a
step
ob ect
Intensity
from two
different
lines
Long
'i'ne
Short
Figure
3.10
3.
Results
MTF
curves:long
vs.
short
lines
c - i.
1000
1200Figure
3.11
3.
Results
The
aerialimage
intensity
profiles shownin
Figure
3.10
appear
very
different.
They do, however,
produceMTF
curves ofvery
similar shape.
This
is
due to the
normalizedintensities
of each curvealong the linear
portionbeing
approximately the
same.The
increase in
line length
will add some small amount of noise.This
noise willbe
3.
Results
3.6
FOCUS
EFFECTS
Figures
3.12,
3.13,
and3.14
showthe
effect offocus
position on
the
resulting
MTF
curve.The
best
focus
positionis
labeled
as0.
The
numbers associated with each curve arede
focus
in
GCA
units.One
GCA
unitis
0.25
micron.A
singlepoly line
is
usedbecause
it
yielded results closestto the
theoretical
MTF
curve.o D
It
Or-c:
-O- w
:
1
V
SD
T
O C
U
~
J
e:
c o^^.i
' '600
400
600
djjc
L|cLes/mmFigure
3.12
3.
Results
!
i
1
vs.
locus
,~l
ol
jecqe
scotle^ona
cycles
'mrr.
Figure
3.13
3. Results
k tl-Tl 1
hir
vs
t
o>
;e
sea
tie:
icFigure
3.14
Results
In
Figure
3.12,
the
curvesfor best
focus,
10,
and30
unitsof
defocus
are plotted.The 10
unitdefocus
curvedeviates
from the
best focus
curve slightly.10
unitdefocus
is
equalto
either plus orminus
2.5
microndefocus.
Using
an average valuefor
b
(0.7),
the
Rayleigh
depth
offocus
is
found
to
be
+/~3-89
microns.This
arbitrary
value ofb
is
suspecthowever,
because the
curvesdeviate
by
a greater amount
than
the
curves calculatedto
determine
repeatability.
The
difference between the 10
unitdefocus
curve andthe
best focus
curve,
at a contrast of0.4,
is
greaterthan
the
6
sigmarange around
the
mean ofthe repeatability
runs.A
lower
valueis
moreappropriate,
in
this
case ab
of .45 will yield adepth
offocus
of+/-2.5
microns.The 30
unitdefocus
curveclearly
showsthe
effect ofdefocus
on
the
MTF.
The 30
unitdefocus
is
equivalentto
7.5
micronsdefocus.
This
is
well outsidethe
depth
offocus
ofthe
projectionlens.
At
acontrast of
0.4,
the 30
unitdefocus
curve correspondsto
a resolutionof
328
cycles/mm.This
is
equalto
1.52
microns comparedto
565
cycles/mm or .884 microns
for
10
units ofdefocus.
The
contrastthat
exists
beyond approximately
360
cycles/mmfor the 30
unit curveis
well3R
below that
requiredby
eventhe
most advanced photoresist3.
Results
In Figure
3.13,
the
curves are plottedfor both
a positiveand a negative
10
units ofdefocus.
The
two
curves show goodcorrelation
in
the
lower
spatialfrequency
range.There
is
somedeviation between the two
athigher
spatialfrequencies.
At
a contrastof
0.4
this
difference
is
not significant.There
is
noticeabledeviation
atfrequencies beyond this
point.This
would suggestthat
there
is
adifference between
a positive and a negativedefocus.
With
the
projectionlens
system usedfor this experiment, this does
notpresent a problem
from
aprocessing
standpoint.If
ahigher
numericalaperture
lens
is
used, then this difference
couldbe
significant.This
asymmetrical effect of
defocus
has been
previously
described.
-1-'42This
same effect canbe
seenin
the
curves ofFigure
3.14.
The
curvesof
this figure
representthe MTF
curvesfor
a positive and negative5
units of
defocus.
This
5
units correspondsto 1.25
micronsdefocus.
This
is
well withinthe
predicteddepth
offocus.
The
difference
between the defocus
curves andthe best focus
curveis
well withinthe
expected experimental variation as predicted
by
the
repeatability
curves.
This
asymmetricalfocus
effect willbecome
significant withsystems where
the depth
offocus
approachesthe
resistthickness.
In
these
systems,
the
optimalfocal
plane willbe
somewhere otherthan
atResults
Figure 3.15
showsthe
relationship
between
resolutionlimit
as
determined
by
the
spatialfrequency
that
yields a modulation of0.4,
and
the
amount ofdefocus.
Resolution
vs.
defocus
700
600-30 10
0
*10Defocus
in GCA
units?30
Figure
3.15
3.
Results
The
resolution
vs.defocus
curve shows an asymmetricaleffect
between
positive and negativedefocus.
It
shouldbe
pointed outhowever,
that this
difference,
withthe
exception ofthe
+/-30
unitdefocus
is
withinthe
experimental variation.While
the difference
at30
unitsdefocus
is
significantfrom
a numericalperspective,
it is
notof practical significance.
This
amount ofdefocus
is
wellbeyond any
amount of
defocus that
mightbe
usedin
animaging
process.Figure
3.16
showsthe
MTF
curvesfrom
both the
center andthe
edge ofthe field.
There
is
no significantdifference between the
3.
Results
j r
v
e s
\
e
L
a
._o c c
t
l
PcLu
ecce
scattering
2C0
400
ec;
cycles/mm
600
1D0D
Figure
3.16
Chapter
4.
Discussion
The
results ofusing
this technique
for
determining
systemMTF
show good agreement withthe theoretical
asdetermined
by
SAMPLE.
It
is important
that the
correct method ofdetermining
the
aerialimage
intensity
profileis
used.The
differences
shownbetween
the
experimental
MTF
andthe theoretical
one couldbe further
reducedby
using
avery
narrowpoly line
asthe scattering line.
The
detector
angle
is important in
this
application.With
a small angle relativeto
the
waferstage,
the
role ofthe
width ofthe
scattering
line
is
reduced.
There
is
some noiseintroduced
by
the
surface ofthe
poly.This
resultsin
the
collection of a small amount of scatteredlight
that
is
not a result ofscattering
from the
edge,
but
ratherfrom the
top
surface ofthe
poly itself.
This
may
be
eitherfrom
the
grainboundary
structure orthe
surfacetopography.
Tests
using
apoly
surface show
that the
noise associated withthe
surfacetopography
to
be
a maximum of13
%
ofthe
scatteredintensity.
Increasing
the
angle4.
Discussion
modulation of
the
edge profiledue
to
the
influence
ofthe
finite
detector
width.The
1.5
%
addition represents a signalto
noise ratioof
approximately
67:1 due to the
scattering.It
has been
shownthat
for
signalto
noise ratios greaterthan
4:1,
the benefit
ofapplying
asmoothing
filter
is
negligible.44In addition, because this technique
does
notinvolve
the
measurement ofimages in
a secondmedium,
but
rather
the
measurement ofthe
aerialimage
itself,
this
source of noiseis
removed as well.The
other sources of noise associated with edgeresponse
determination
aredetector
noise andstray light.
The
stray light
component was eliminatedby taking
measurements
in
adarkened
environment.There
is
also an ambientlight
compensator on
the detector.
This
was not used.The
use of adetector
which uses a
transimpedence
amplifier asits
photomultiplier circuit45
keeps
the
noise associated withthe
detector
to
a minimum.-"
The
noise equivalent power of
the
detector
is
statedto
be
2.0
X
10~12
watts
according to the
technical
data
suppliedby
the
manufacturer.This
represents a signalto
noise ratio of over200:1
in
this
application.
From these
considerations,it is
concludedthat
no noisefiltering
is
neededto
keep
the
results within statistical experimentalerror
limits.
Reflection
is
not suitablefor
aerialimage determination in
this
applicationdue
to the
detector
angle.If
it
were possibleto
4.
Discussion
difference between
the
aluminum
andthe
backround
oxide couldbe
usedto
obtain a model ofthe
aerialimage
intensity
profile.In
the
casewhere
the
detector is
mounted closeto 90
degrees
with respectto the
wafer
plane, the
collected
signal asthe
aluminum was stepped acrossthe
edge wouldbe
proportional
to the
aerialimage intensity.
This
assumes a constant
reflectivity
overthe
surface area ofthe
aluminumused
in
the
scan.The
effect of changesin
focus
canclearly
be
seenin
the
resulting
MTF
curves.This
canbe
approximately
relatedto the
Rayleigh
depth
offocus
ofthe
projection system used.The
effect of adefocus
onthe
aerialimage is
to
widenthe
edge spreadfunction
anddecrease the
slope.If
the
slope ofthe
center ofthe
aerialimage is
kept
constant andthat
ofthe
tails
is
decreased,
the
resultis
achange
in
the high
frequency
componentsif
the MTF
curve.This
occurswhen multiple
lines
are used orthere
is
a slight rotationin
the
scattering line
with respectto the
aperture.It
canbe
shownthat
by
using
the
centrallimit
theorem,
alarge
number oflines
canbe
usedto
accurately
predictthe
aerialimage
intensity
profile.46
This
methodrequires
30
or morelines
sothat the
true
aerialimage
intensity
profile will
fall between
specified confidencelimits
onthe
measured
intensity
profile.The
greaterthe
number oflines used, the
smaller
the
errorintroduced
by
the
linewidth
differences.
This
method would4.
Discussion
the
edge andthat
seenfrom
the
surface.In
orderto
detect
changesin
the
MTF
due to
changesin
barometric
pressure,
the
experimental
variability
needsto be
reduced.The
large
depth
offocus
ofthe 0.28
numerical aperturelens
does
makethis
difficult.
For
a system with a smallerdepth
offocus,
this
technique
wouldlikely
be
better
ableto
detect
changesin
the
plane ofbest
focus
causedby
the
differences
in
pressure.Even
if
the
experimental
variability
couldbe
significantly
reduced,
it is
doubtful
that this technique
couldaccurately determine the
effect of pressureChapter 5,
Conclusions
andRecommendations
The
in-situ
determination
of stepper systemMTF
has
been
demonstrated.
The
measuredMTF
using poly
edgescattering is
shownto
be
closeto
the theoretical
MTF
asdetermined
by
SAMPLE
using
the
system parameters.
These
are a numerical aperture of0.28,
anilluminating
wavelength of435.8
nm,
and a partial coherence of0.68.
The theoretical
curve representsthe
valuesfor the lens
itself
and notany
factors
introduced
by
the
whole stepper system.Several
causesaccounting
for
the
deviation
between
theoretical
and actual werepresented.
The
comparisonbetween
reflection andscattering
showsthat
reflection
is
not a suitable methodto
usein
this
configuration.By
changing
some ofthe
experimental conditions such as collectorangle,
it
could perhapsbe
demonstratedthat
reflection also provides aneffective method
for
determining
aerialimage
intensity.
It
is
concluded
that
for
this
experimentalsetup,
poly
edgescattering
5.
Conclusions
andRecommendations
The
effects offocus
onthe
aerialimage
intensity
profilesand
the
resulting
MTF
curvesis demonstrated.
There
is
nodifference
beyond
that
which canbe
explained
by
experimental variationfor the
curves
for
adefocus
valuethat
falls
well withinthe
expecteddepth
offocus.
For
defocus
values nearthe
expecteddepth
offocus,
there
is
anoticeable
diffference
between the
MTF
curves ofdefocus
andbest
focus.
The
difference
is
dramatic
for large defocus
values.There
is
little difference
over most ofthe
usable spatialfrequency
rangebetween
single and multiplelines.
The
difference
is
evident
in
the
higher frequencies.
For poly
lines,
the
difference
at amodulation of
0.4
is
withinthe
expected variation.This
is
a resultof a
flattening
ofthe
edge response atthe
beginning
andthe
end ofthe
aperture asdetected
by
the
scatteredlight.
The
stepper system usedin
this
experimentdid
not allowfor
the
detection
ofany
difference
in
responsedue
to
changesin
barometric
pressure.This
is
theorized
to be
in
partdue to the
large
depth
offocus for the
projectionlens
atthe
illuminating
wavelength.
Application
ofthis
technique
to
a system with a smallerdepth
offocus
may
allowdetection
of changesin
the
plane ofbest
focus
due
to
5.
Conclusions
andRecommendations
Recommendations
for further study include
the design
andtesting
of a mask andtarget
wafer set with alarge
number oflines.
This
wouldgreatly
increase
the
signal strength.Also,
to test
atarget
wafer with
very
narrowlines.
This
would perhaps allowfor
reducedexperimental error and enable
the
detection
of changesin
focus
due to
pressure
differences.
In
orderto
makethe
systemless time
consuming,
the
data
collection couldbe
automated.This
wouldinvolve
digitizing
the
output anddevelopment
of softwareto
providethe
input
file
for