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Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)

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Figure

Fig. 1.1. (a) ABO3 perovskite unit cell; (b) Polarization – Electric field hysteresis [1]
Fig. 2.6. Polarization hysteresis loops of PZT and SBT ferroelectric thin films [11].
Fig. 2.13. Schematic of a MFIS FeFET.
Fig. 2.22. C-V characteristics of Al/SBT (280 nm)/HfO2/Si (a) with 3 nm HfO2 buffer layer (b) with 12 nm buffer layer, and (c) with 18 nm buffer layer [20]
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