Effect of annealing on the structure and magnetic properties of Co2FeAl0.5Si0.5 thin films on Ge(111)
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![Fig. 1.ACCEPTED~18 nm. (b) HAADF STEM image acquired along the [1abruptness of the CFAS/Ge interface and characteristic of (a) HAADF STEM image showing that the as-grown film (at RT) is uniform with a thickness of 1�0] crystallographic direction, showing](https://thumb-us.123doks.com/thumbv2/123dok_us/1989272.160837/8.595.77.499.180.471/accepted-acquired-abruptness-interface-characteristic-thickness-crystallographic-direction.webp)
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