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The world’s first high voltage GaN-on-Diamond power semiconductor devices

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Figure

Fig. 2: Power density trend of industrial and research systems and the Power Density Barriers [1]
Fig. 5: Cross-sectional schematics of (a) AlGaN/GaN HEMT (without FP), (b) AlGaN/GaN HEMT (with SFP), and (c) bidirectional AlGaN/GaN HEMT
Fig. 6: Top view photographs of the fabricated AlGaN/GaN HEMTs (a) circular (without FP), (b) circular (with SFP), (c) stripe form (without FP), and (d) bidirectional
Fig. 7: Simplified illustration of the setup for breakdown voltage measurements.
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