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Effect of fluorine implantation dose on boron thermal diffusion in silicon

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Figure

FIG. 1. Boron SIMS profiles in F+ implanted and unimplanted samples afteran anneal of 30 s at 1000 °C in dry N2
TABLE I. Summary of values of normalized boron diffusion coefficient forunimplanted samples and samples implanted with F+ doses 5�1014–2.3�1015 cm−2
FIG. 3. Fluorine SIMS profiles before and after an anneal of 30 s at1000 °C in dry N2. Boron profiles after anneal are also included for refer-ence
FIG. 5. Fluorine concentrations at depths corresponding to the positions ofthe shallow fluorine peak the fluorine shoulder and the deep fluorine peak asa function of F+ implantation dose
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