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Barrier Properties of Electroplating Nickel Layer for Copper Metallization in Silicon Solar Cells

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Figure

Figure 1.  X-ray diffraction patterns of electroless Ni deposits with 60 nm thickness samples annealed at 300 - 800 oC for 10 min
Figure 3. SEM images of the Cu/Ni (120 nm)/ta-Si sample annealed at 300 °C for 10 min
Fig. 4(b)) area shows that it is constituted of Cu without Ni and Si; layer 2 (Fig. 4(c)) is constituted of
Figure 4.(e)  (a) STEM bright field image of Cu/Ni (120 nm)/ta-Si stack annealed at 300 oC for 10 min, EDS map of (b) Cu, (c) Ni, (d) Si, (e) an overlay of Cu, Ni, and Si EDS map, and (f) an enlarge image of the metal stack of Cu/Ni (120 nm)/ta-Si annealed
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