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150°C amorphous silicon thin-film transistor technology for polyimide substrates

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Figure

Figure 1. Growth rate and index of refraction of SiNx films as functions ofrf power and hydrogen flow during the 150°C PECVD deposition.
Figure 6. Schematic cross-sectional view of TFT on �a� Corning 7059 glass,and �b� Kapton
Figure 11 shows the transfer characteristic and the calculated mo-bilities as function of applied gate voltage for these devices
Figure 10. Transfer characteristics of four groups of a-Si:H TFTs withback-channel passivation, fabricated at 150°C with the aim to reach a highmobility

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