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110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression

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Figure

Fig. 1.Boron SIMS profiles for the baseline double polysilicon siliconbipolar technology after the 700C solid phase epitaxy anneal and after the90 min nitride spacer deposition
Fig. 2.SIMS profiles for 185- and 50-keV Fafter implant and after a 60-s anneal at 900implants into crystalline siliconC.
Fig. 6.Cross section TEM micrographs for samples (a) without andThe magnification bar is 0.1(b) with a 5 � 10cm150-keV fluorine implant after the SPE anneal
Fig. 7.Boron and fluorine SIMS profiles (oxygen beam) for transistorreceived all the thermal treatments needed to produce a double polysiliconemitter bipolar transistor except the vapox anneal

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