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Planar InAs photodiodes fabricated using He ion implantation

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Figure

Fig. 1. (a) Schematic of an implanted p-i-n diode, indicating the He implanted regions and (b) representative image of fabricated diodes of various sizes
Figure 2 shows the resistivity of the p layer, determined from TLM measurements, as a sample
Fig. 4. (a) Measured dark currents and (b) Forward current characteristics for ‘as-implanted’ (circles), annealed at 350 °C (triangles), 450 °C (diamonds) and 550 °C (squares) diodes with fabricated using wet etching, while the solid line shows the dark cu
Fig. 5. Dark currents for samples annealed at 350 °C (closed symbols) and 450 °C (open symbols) with different radii diodes sizes (200 (circles), 100 (triangles), 50 (squares))
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