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Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

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Figure

Figure 2.6: Antiferroelectric hysteresis loop with Ecrit, critical field [25].
Figure 3.2: (a) Standard capacitor. (b) MFM capacitors [44]. (c) MIS Capacitor [17]
Figure 3.3: (a) Charge motion n-FeFET during one cycle of operation; ID-VG characteris-tics (b) Alternative gate structures
Figure 3.5: Survey of experimental reports of tunnel electroresistance with ferroelectrictunnel junctions [49].
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