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Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes

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Figure

Fig. 2.Current–voltage characteristics in dark for� AlGaAs pindiodes with w = 0.85 �m (�), 0.49 �m (), 0.09 �m (�), 0.049 �m (r),0.026 �m (�), and nipdiodes with w = 0.51 �m(), and 0.14 �m ().The current–voltage characteristic of the p-n diode with doping levels of � 4.4 10cmin the p-region and � 1 � 10cmin the n-region is alsoshown (�).
Fig. 3.Multiplication characteristics for pure carrier injection with 442 nmand calculated using the DSM with the ionization coefficients and thresholdenergies,excitation (symbols), mixed carrier injection with 542 nm excitation (�) E= 3:4 eV and E= 3:6 eV
Fig. 5.Excess noise factor, Fmeasured (symbols) and calculated (lines)using the DSM with ionization coefficients and threshold energies from [12] forAlGaAs pindiodes with w = 0:51 �m (, dashed line) and 0.14 �m(, dotted line), and Fmeasured (�) and calcula
Fig. 7.Modeled excess noise factor (solid lines) using the history-dependentmodel for AlGaAspindiodes with w = 0.85 �m(�), 0.49 �m (),0.09 �m (�), 0.049 �m (r), 0.026 �m (�) and nipdiodes with w =0.51 �m () and 0.14 �m (), and for the p-n diode (�).

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