4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction.

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This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche

-channel length / effective channel length -parasitic S/D resistance / gate resistance -MOSFET scaling. Vt considerations / channel profile

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Results obtained from the assessment of carrying capacity conducted in the study suggest that the concept of carrying capacity is very much relevant to a

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A SETL optimal portfolio is one that minimizes portfolio expected tail loss subject to a constraint of achieving expected portfolio returns at least as large as an investor defined