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Low-temperature (less than 450 degrees), plasma-assisted deposition of poly-si thin films on SiO(2) and glass through interface engineering

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Figure

FIG. 1. Schematic of two-stage film structure. A thin �c-Si seed layer isdeposited prior to bulk Si film deposition.
FIG. 4. Thickness vs time for the initial stages of �c-Si film growth onSiO2 as determined via SE.
FIG. 8. Raman spectra of two-stage processed films with an 80 Å �c-Si seedlayer and �a� epi-Si conditions ‘‘A’’ and �b� epi-Si conditions ‘‘B’’ bulk Sifilms.

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