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Hole weak anti localization in a strained Ge surface quantum well

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Figure

FIG. 1. (a) Schematic of the hetero-structure. (b) Optical image of the Hallresistivity shows a dip at a low field,which is a signature of weak anti-localization
FIG. 2. (a) Traces of the weak anti-localization contribution to the channeltages and carrier densities from 1�of scattering timeconductivity DrWAL as a function ofB? for different accumulation gate vol-:31011 cm�2 (top trace) to 1:7 � 1011cm�2 (bottom tra
FIG. 3. Black trace: Hall resistivity qconductivityXY as a function of the in-plane mag-netic field at Vtg ¼ �5.8 V

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