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Effect of Temperature Dependence on Electrical Characterization of p n GaN Diode Fabricated by RF Magnetron Sputtering

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Figure

Figure 1. Layers structure of a p-n GaN homo junction diode.
Figure 2. TEM micrographs of (a) p-n GaN diode structure, (b) n-GaN layer, and (c) p-GaN layer
Figure 4. Electrical properties of p-n GaN homo junction diode measured at the room temper- ature (RT)
Figure 5.  The forward and reverse current-voltage characteristics of a p-n GaN diodein the testing temperature range of 25˚C - 200˚C
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