AP9477GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Simple Drive Requirement

BV

60V

▼ Lower Gate Charge

R

90mΩ

▼ Fast Switching Characteristic

I

4.1A

▼ RoHS Compliant & Halogen-Free

Description

Absolute Maximum Ratings@T

=25

C(unless otherwise specified)

Symbol Units V_DS V V_GS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃

EAS Single Pulse Avalanche Energy4 mJ

TSTG ℃

TJ ℃

Symbol Value Unit

Rthj-a Maximum Thermal Resistance, Junction-ambient3 45 ℃/W

Data and specifications subject to change without notice

Thermal Data

Parameter Storage Temperature Range

Total Power Dissipation 2.8

-55 to 150 Operating Junction Temperature Range -55 to 150

Linear Derating Factor 0.02

1.8

Drain Current, VGS @ 10V3 3.3

Pulsed Drain Current1 20

Gate-Source Voltage +20 Drain Current, VGS @ 10V3 4.1 Parameter Rating Drain-Source Voltage 60

Halogen-Free Product

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

G

D

S

.

Electrical Characteristics@T

=25

C(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V

∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.057 - V/℃

RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=4A - - 90 mΩ

VGS=4.5V, ID=2A - - 110 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.8 - 2.5 V

gfs Forward Transconductance VDS=10V, ID=4A - 4 - S

IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA

Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V - - 25 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA

Qg Total Gate Charge ID=4A - 6.5 10.5 nC

Q_gs Gate-Source Charge V_DS=48V - 1.5 - nC

Q_gd Gate-Drain ("Miller") Charge V_GS=4.5V - 3.5 - nC

t_d(on) Turn-on Delay Time2 V_DS=30V - 5 - ns

t_r Rise Time I_D=1A - 6 - ns

t_d(off) Turn-off Delay Time R_G=3.3Ω - 17 - ns

t_f Fall Time V_GS=10V - 3.5 - ns

C_iss Input Capacitance V_GS=0V - 510 820 pF

C_oss Output Capacitance V_DS=25V - 55 - pF

C_rss Reverse Transfer Capacitance f=1.0MHz - 40 - pF

Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2 IS=2.1A, VGS=0V - - 1.3 V

trr Reverse Recovery Time IS=4A,

V

V

Qrr Reverse Recovery Charge dI/dt=100A/µs - 31 - nC

Notes:

1.Pulse width limited by Max. junction temperature. 2.Pulse test

4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 150 ℃/W when mounted on Min. copper pad.

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

20

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. On-Resistance vs.

Reverse Diode

0 4 8 12 16 20 0 2 4 6 8 VDS , Drain-to-Source Voltage (V) ID , Dr a in C u rr e nt (A ) TA=25 o C _10V 7.0V 5.0V 4.5V VG=3.0V 0 4 8 12 16 20 0 2 4 6 VDS , Drain-to-Source Voltage (V) ID , Dr a in C u rr e nt (A ) TA=150 o C 10V 7.0V 5.0V 4.5V VG=3.0V 0.6 1.0 1.4 1.8 2.2 -50 0 50 100 150 Tj , Junction Temperature ( o C) N o rmalize d RDS(ON) ID= 4 A VG=10V 60 70 80 90 100 110 2 4 6 8 10 VGS , Gate-to-Source Voltage (V) RDS(ON) (m Ω) ID= 2 A TA=25 o C 0 2 4 6 0 0.4 0.8 1.2 VSD , Source-to-Drain Voltage (V) IS (A ) Tj=25oC Tj=150oC 60.0 85.0 110.0 135.0 160.0 0 4 8 12 16 20

ID , Drain Current (A)

RDS(ON) (m Ω) VGS=4.5V VGS=10V

.

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

0 2 4 6 8 10 12 0 4 8 12 16

QG , Total Gate Charge (nC)

VGS , G a te to S o u rc e Voltage ( V ) ID=4A VDS=32V VDS=40V VDS=48V 10 100 1000 10000 1 5 9 13 17 21 25 29 VDS , Drain-to-Source Voltage (V) C ( p F) f=1.0MHz Ciss Coss Crss Q VG 4.5V QGS QGD QG Charge 0.01 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) ID (A ) TA=25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0 5 10 15 20 0 2 4 6 VGS , Gate-to-Source Voltage (V) ID , Dr a in C u rr e nt (A ) Tj=150 o C Tj=25 o C VDS=5V 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) N o rmalize d T h e rmal Re spon se ( Rth ja ) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 150℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse

.

MARKING INFORMATION

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

Part Number

9477GK

YWWSSS

meet Rohs requirement for low voltage MOSFET only

Package Code