N- and P-Channel for Level Shift Load Switch

N- and P-Channel for Level Shift Load Switch

Ordering Information: SiA777EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

X X X E F X

Lot Traceability and Date code Part # code S1 D 1/ G 2 NC S2 G1 D2 1 6 5 4 2 3 2.05 mm 2.05 mm PowerPAK® _{SC-70-6 Dual} D1/G2 D2 D₁/G₂ S1 G1 R D2 S2 Q2 Q1 Notes: a. Package limited.

b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS

T

= 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage V_DS 20 - 12

V

Gate-Source Voltage V_GS ± 6 ± 8

Continuous Drain Current (T_J = 150 °C)

T_C = 25 °C ID 1.5a - 4.5a A TC = 70 °C 1.5a - 4.5a T_A = 25 °C _1.5a, b, c _{- 4.5}a, b, c TA = 70 °C 1.5a, b, c - 3.9b, c

Pulsed Drain Current I_DM 4 - 15

Source Drain Current Diode Current TC = 25 °C I_S 1.5

a _{- 4.5}a

T_A = 25 °C _1.6b, c _{- 1.6}b, c

Maximum Power Dissipation

T_C = 25 °C PD 5 7.8 W T_C = 70 °C 3.2 5 T_A = 25 °C _1.9b, c _1.9b, c TA = 70 °C 1.2b, c 1.2b, c Operating Junction and Storage Temperature Range T_J, T_stg - 55 to 150

°C Soldering Recommendations (Peak Temperature)d, e 260

THERMAL RESISTANCE RATINGS

Parameter Symbol

N-Channel P-Channel

Unit

Typ. Max. Typ. Max.

Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 52 65 52 65 _°C/W

Maximum Junction-to-Case (Drain) Steady State R_thJC 20 25 12.5 16

PRODUCT SUMMARY

V_DS (V) R_DS(on) (Ω) I_D (A) Q_g (Typ.)

N-Channel 20 0.225 at V_GS = 4.5 V _1.5a 1.1 nC 0.270 at V_GS = 2.5 V _1.5a 0.345 at V_GS = 1.8 V _1.5a 0.960 at V_GS = 1.5 V 0.5 P-Channel - 12 0.057 at V_GS = - 4.5 V - 4.5a 5 nC 0.077 at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 0.200 at V_GS = - 1.5 V - 1.5

FEATURES

•

Halo

g

en-free Accordin

g

to IEC 61249-2-21

Definition

•

TrenchFET

Power MOSFETs

•

Typical ESD Protection: N-Channel 2800 V

P-Channel 1900 V

•

100 % R

Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch with Level Shift for Portable Devices

- N-Channel for Level Shift Drive

Notes:

a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

SPECIFICATIONS

T

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V_DS VGS = 0 V, ID = 250 µA N-Ch 20 V VGS = 0 V, ID = - 250 µA P-Ch - 12

V_DS Temperature Coefficient ΔV_DS/T_J ID = 250 µA N-Ch 21

mV/°C I_D = - 250 µA P-Ch - 3

V_GS(th) Temperature Coefficient ΔV_GS(th)/T_J ID = 250 µA N-Ch - 2.3

I_D = - 250 µA P-Ch 2.3

Gate Threshold Voltage V_GS(th) VDS = VGS, ID = 250 µA N-Ch 0.4 1.0 V V_DS = V_GS, I_D = - 250 µA P-Ch - 0.4 - 1 Gate-Body Leakage IGSS V_DS = 0 V, V_GS = ± 3 V N-Ch ± 1 µA V_DS = 0 V, V_GS = ± 4.5 V P-Ch ± 0.5 V_DS = 0 V, V_GS = ± 6 V N-Ch ± 1 mA V_DS = 0 V, V_GS = ± 8 V P-Ch ± 3 µA Zero Gate Voltage Drain Current I_DSS

VDS = 20 V, VGS = 0 V N-Ch 1

VDS = - 12 V, VGS = 0 V P-Ch - 1

VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10

V_DS = - 12 V, V_GS = 0 V, T_J = 55 °C P-Ch - 10

On-State Drain Currentb ID(on)

V_DS ≥ 5 V, V_GS = 4.5 V N-Ch 4

A V_DS ≤ - 5 V, V_GS = - 4.5 V P-Ch - 10

Drain-Source On-State Resistanceb RDS(on)

V_GS = 4.5 V, I_D = 1.6 A N-Ch 0.183 0.225 Ω V_GS = - 4.5 V, I_D = - 3.8 A P-Ch 0.047 0.057 V_GS = 2.5 V, I_D = 1.5 A N-Ch 0.220 0.270 V_GS = - 2.5 V, I_D = - 3.3 A P-Ch 0.063 0.077 V_GS = 1.8 V, I_D = 1.3 A N-Ch 0.275 0.345 V_GS = - 1.8 V, I_D = 2.6 A P-Ch 0.095 0.115 V_GS = 1.5 V, I_D = 0.3 A N-Ch 0.320 0.960 VGS = - 1.5 V, ID = 1 A P-Ch 0.125 0.200 Forward Transconductanceb gfs VDS = 10 V, ID = 1.6 A N-Ch 3.5 S VDS = - 10 V, ID = - 3.8 A P-Ch 11 Dynamica

Total Gate Charge Q_g

V_DS = 10 V, V_GS = 5 V, I_D = 1.7 A N-Ch 1.3 2.2 nC V_DS = - 6 V, V_GS = - 8 V, I_D = - 4.9 A P-Ch 7.5 12 N-Channel V_DS = 10 V, V_GS = 4.5 V, I_D = 1.7 A P-Channel V_DS = - 6 V, V_GS = - 4.5 V, I_D = - 4.9 A N-Ch 1.1 1.7 P-Ch 5 8 Gate-Source Charge Q_gs N-Ch 0.2 P-Ch 0.6 Gate-Drain Charge Q_gd N-Ch 0.1 P-Ch 1.8 Gate Resistance R_g f = 1 MHz N-Ch 40 200 400 Ω P-Ch 2 10 20

Notes:

a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS

T

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Dynamica

Turn-On Delay Time t_{d(on) N-Channel} VDD = 10 V, RL = 7.7 Ω I_D≅ 1.3 A, V_GEN = 4.5 V, R_g = 1 Ω P-Channel V_DD = - 6 V, R_L = 1.5 Ω I_D≅ - 3.9 A, V_GEN = - 4.5 V, R_g = 1 Ω N-Ch 20 30 ns P-Ch 20 30 Rise Time t_r N-Ch 12 20 P-Ch 20 30

Turn-Off Delay Time t_d(off) N-Ch 70 105

P-Ch 32 50

Fall Time t_f N-Ch 20 30

P-Ch 16 25

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I_S T_C = 25 °C N-Ch 1.5 A

P-Ch - 4.5

Pulse Diode Forward Currenta ISM

N-Ch 4

P-Ch - 15

Body Diode Voltage V_SD IS = 1.3 A, VGS = 0 V N-Ch 0.9 1.2 V I_S = - 3.9 A, V_GS = 0 V P-Ch - 0.8 - 1.2

Body Diode Reverse Recovery Time t_rr

N-Channel I_F = 1.3 A, dI/dt = 100 A/µs, T_J = 25 °C P-Channel I_F = - 3.9 A, dI/dt = - 100 A/µs, T_J = 25 °C N-Ch 50 75 ns P-Ch 45 70

Body Diode Reverse Recovery Charge Q_rr N-Ch 30 45 nC

P-Ch 25 40

Reverse Recovery Fall Time t_a N-Ch 15

ns

P-Ch 15

Reverse Recovery Rise Time t_b N-Ch 35

N-CHANNEL TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise noted

Gate Current vs. Gate-to-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current

0 5 10 15 20 25 30 35 0 2 4 6 8

VGS- Gate-to-SourceVoltage (V)

- Gate C u rrent (mA) IGSS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS= 5Vthru2V VGS= 1V VGS= 1.5V

VDS- Drain-to-SourceVoltage (V)

- Drain C u rrent (A) ID 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS= 1.5V VGS= 2.5V VGS= 1.8 V VGS= 4.5V - On -R esistance ( Ω ) RDS( on)

ID- Drain Current (A)

Gate Current vs. Gate-to-Source Voltage

Transfer Characteristics

Gate Charge

VGS- Gate-to-SourceVoltage (V)

- Gate C u rrent (A) IGSS 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 0 2 4 6 8 TJ= 150 °C TJ= 25 °C 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 TC= 25 °C TC= 125 °C TC= - 55 °C

VGS- Gate-to-SourceVoltage (V)

- Drain C u rrent (A) ID 0 2 4 0.0 0.3 0.6 0.9 1.2 1.5 VDS= 16V ID= 1.7 A VDS= 10V - Gate -t o -So u rce V oltage ( V )

Qg- Total Gate Charge (nC) VGS

N-CHANNEL TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise noted

Normalized On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 - 50 - 25 0 25 50 75 100 125 150 VGS= 1.5V; ID= 0.4 A VGS= 4.5V, 2.5V, 1.8 V; ID= 1.6 A TJ- Junction Temperature (°C) ( N ormalized) - On -R esistance RDS( on) 0.0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 TJ= 25 °C TJ= 125 °C ID= 1.6 A - On -R esistance ( Ω ) RDS(on )

VGS- Gate-to-SourceVoltage (V)

0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID= 250 µA ( V ) VGS( th) TJ- Temperature (°C)

Source-Drain Diode Forward Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ= 150 °C TJ= 25 °C VSD- Source-to-DrainVoltage (V) - So u rce C u rrent (A) IS 0 2 4 6 8 Po w er ( W ) Time (s) 10 1000 0.1 0.01 0.001 1 100 10 0.1 0.1 1 10 1 TA= 25 °C Single Pulse 1 ms 0.01 1 s, 10 s 100 Limitedby RDS(on)* 10 ms 100 ms

VDS- Drain-to-SourceVoltage (V) *VGS> minimumVGSatwhich RDS(on)is specified

-Drain C u rrent (A) ID DC 100µs BVDSS Limited

N-CHANNEL TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise noted

* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 1 2 3 4 0 25 50 75 100 125 150 Package Limited TC- Case Temperature (°C) ID -Drain C u rrent (A) Power Derating 0 1 2 3 4 5 25 50 75 100 125 150 TC- Case Temperature (°C) Po w er Dissipation ( W )

N-CHANNEL TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise noted

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3 ₁₀-2 ₁₀-1 _{1 10 1000}

10-4 ₁₀₀

0.2

0.1

SquareWave Pulse Duration (s)

N ormalized Ef fecti v e T ransient Thermal Impedance 1 0.1 0.01 t1 t2 Notes: PDM 1. Duty Cycle, D =

2. Per Unit Base = RthJA= 110 °C/W 3. TJM- TA= PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05

Normalized Thermal Transient Impedance, Junction-to-Case

1

0.1

Duty Cycle = 0.5

SquareWave Pulse Duration (s)

N ormalized Ef fecti v e T ransient Thermal Impedance 10-2 ₁₀-1 ₁ 10-4 0.02 Single Pulse 0.1 0.2 0.05

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15

VGS- Gate-to-SourceVoltage (V)

- Gate C u rrent (mA) IGSS TJ= 25 °C 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS= 5Vthru3.5V VGS= 1V VGS= 3V VGS= 2V VGS= 2.5V VGS= 1.5V

VDS- Drain-to-SourceVoltage (V)

- Drain C u rrent (A) ID 0.00 0.05 0.10 0.15 0.20 0.25 0 3 6 9 12 15 VGS= 2.5V VGS= 1.8 V VGS= 4.5V VGS= 1.5V - On -R esistance ( Ω ) RDS(on )

ID- Drain Current (A)

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Capacitance

VGS- Gate-to-SourceVoltage (V)

- Gate C u rrent (A) IGSS 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 0 3 6 9 12 15 TJ= 150 °C TJ= 25 °C 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 TC= 25 °C TC= 125 °C TC= - 55 °C

VGS- Gate-to-SourceVoltage (V)

- Drain C u rrent (A) ID 0 200 400 600 800 1000 1200 0 3 6 9 12 Ciss Coss Crss

VDS- Drain-to-SourceVoltage (V)

C - Capacitance

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage 0 2 4 6 8 0 2 4 6 8 VDS= 9.6 V VDS= 10V ID= 4.9 A VDS= 3V - Gate -t o -So u rce V oltage ( V )

Qg- Total Gate Charge (nC) VGS 0.1 1 10 100 0.0 0.5 1.0 1.5 TJ= 25 °C TJ= 150 °C VSD- Source-to-DrainVoltage (V) - So u rce C u rrent (A) IS 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 ID= 250 µA ( V ) VGS( th) TJ- Temperature (°C)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 VGS= 2.5V; ID= 3.8A VGS= 4.5V; ID= 3.8A VGS= 1.8 V; ID= 1 A VGS= 1.5V; ID= 1 A TJ- Junction Temperature (°C) ( N ormalized) - On -R esistance RDS( on) 0.00 0.04 0.08 0.12 0.16 0.20 0 1 2 3 4 5 ID= 1 A; TJ= 125 °C ID= 3.8A; TJ= 25 °C ID= 3.8A; TJ= 125 °C ID= 1 A; TJ= 25 °C - On -R esistance ( Ω ) RD S (on)

VGS- Gate-to-SourceVoltage (V)

1000 100 1 0.001 0.01 0.1 10 Po w er ( W ) Pulse (s) 20 10 5 15 0

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Safe Operating Area, Junction-to-Ambient

100 1 0.1 1 10 100 0.01 10 0.1 _{TA= 25 °C} Single Pulse 100 ms Limitedby RDS(on)* BVDSS Limited 1 ms 100µs 10 ms 1 s, 10 s DC

VDS- Drain-to-SourceVoltage (V) *VGS> minimumVGSatwhich RDS(on)is specified

-Drain C u rrent (A) ID Current Derating* 0 2 4 6 8 10 12 0 25 50 75 100 125 150 Package Limited TC- Case Temperature (°C) ID -Drain C u rrent (A) Power Derating 0 2 4 6 8 25 50 75 100 125 150 TC - Case Temperature (°C) Po w er Dissipation ( W )

P-CHANNEL TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65371.

Normalized Thermal Transient Impedance, Junction-to-Ambient

1 0.1 0.01 Nor maliz ed Ef fectiv e T ransient Ther mal Impedance 10-3 ₁₀-2 ₁₀-1 _{1 10 1000} 10-4 ₁₀₀

Square Wave Pulse Duration (s) Single Pulse 0.02 0.05 0.1 0.2 Duty Cycle = 0.5 1. Duty Cycle, D =

2. Per Unit Base = R th JA = 110 °C/W 3. T JM - T A = P DM Z th JA (t) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM

Normalized Thermal Transient Impedance, Junction-to-Case

10 -3 ₁₀ -2 ₁₀ -1

10 -4 1

0.01

Square Wave Pulse Duration (s)

Nor maliz ed E f f ectiv e T ransient Ther mal Impedance Duty Cycle = 0.5 0.2 0.1 Single Pulse 0.02 0.05

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