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Dependence of Atomic Scale Si(110) Surface Roughness on Hydrogen Introduction Temperature after High Temperature Ar Annealing

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Figure

Figure 1. FT-IR-ATR spectra of Si(110) surfaces (i) before Ar annealing (w/o Ar annealing); (ii) after Ar annealing using Ar gas during cooling process (Ar-cooled); (iii) after Ar annealing using H2 gas during the cooling process from 200˚C (H2-cooled_200˚
Figure 2. XPS spectra of Si(110) surfaces (i) before Ar annealing (w/o Ar annealing); (ii) after Ar annealing using Ar gas during the cooling process (Ar-cooled); (iii) after Ar annealing using H2 gas during the cooling process from 1000˚C (H2-cooled_1000˚
Figure 4. Surface roughness and AFM images of polished and annealed Si(110) wafers (images were obtained for a 3 × 3 μm2 measurement area) (i) before Ar annealing (w/o Ar annealing); (ii) after Ar annealing using Ar gas during the cooling process (Ar-coole

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