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Nano structure fabrication of GaAs using AFM tip induced local oxidation method: different doping types and plane orientations

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Figure

Figure 1 Schematics of the chemical reactions and species involved in the AFM local oxidation process
Figure 2 An AFM images displaying the oxide lines. Formed at (a) p-type GaAs(100), (b) n-type GaAs(100), (c) p-type GaAs(711), and (d) n-type GaAs(711) with varying loading forces of 60, 120, and 180 nN and applying tip voltage of 5 V.
Figure 3 AFM local oxidation results. Of (a) p-GaAs(100), (b) n-GaAs(100), (c) p-GaAs(711), and (d) n-GaAs(711) as a function of the appliedbias voltages and the loading forces.
Figure 6 shows the loading force-dependent localoxide height for GaAs with different doping types and
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