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Effect of the Doping Layer Concentration on Optical Absorption in Si δ Doped GaAs Layer

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Figure

Figure 1(b)changes when the electric field intensity increases. From  the dominant transition is (3-4) and the maxi- mum of the (1-2) transition decreases
Figure 5. The absorption coefficient of (1-2) intersubband transition for different concentration ND of the doped layer

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