Stability of Postannealed Silicon Dioxide Electret Thin Films Prepared by Magnetron Sputtering

The aim of this thesis was to investigate in detail the properties of high nitrogen content amorphous carbon nitride films (CNx) prepared by a radio frequency (r.f) reactive

Therefore, this study investigated the influence of sputtering power as well as deposition pressure on optical properties of tungsten oxide thin films.. MATERIALS

(2015) Effects of Si-Layer-Thickness Ratio on UV-Light-Emission Intensity from Si/SiO2 Multilayered Thin Films Prepared Using Radio-Frequency

The film thickness of ZnS films prepared at different substrate temperatures was estimated using cross-sec- tional FESEM images shown in Figure 2.. From these images, the film

In this paper, we have done several studies on the structural, optical and electrical properties of Ti thin films prepared by using RF magnetron sputtering under sputtering power

Zone C occurs for high partial pressures of reactive gas, when the target is completely poisoned, resulting on the formation of compact semi- transparent smooth

The influence of the argon gas flow and process pressure used and substrate temperature on the stress formation in CdTe thin films deposited by pulsed dc magnetron sputtering has

6.3.1 XRD of as-grown CdTe single films of glass as a function of Ar pressure157 6.3.2 Effects of CdTe sputter pressure and post-deposition treatment time on device