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Effects of Post Deposition Annealing on ZrO2/n GaN MOS Capacitors with H2O and O3 as the Oxidizers

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Figure

Figure 3 shows the C[17]. However, the MOS capacitors with Hcapacitance density went up gradually as the anneal-ing temperature increased, which can be attributedto the improved crystalline quality of ZrOGaN structure measured at 10 kHz with different an-n
Fig. 3 C-V characteristics of MOS capacitors under different annealing temperatures. a H2O as the oxidizer
Fig. 5 The maximum ratio of capacitance density and voltage of the capacitors with different annealing temperatures
Fig. 7 The conductive mechanism of MOS capacitors annealed at 500 °C. a Schottky emission

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