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Electronic Transport Properties of Two-Dimensional Semiconductors and Topological Insulators with Device Applications.

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Figure

Table 2.1 Lattice constant, Q-K energy separation, and Γ-K energy separation of TMDs along with theeffective masses at the relevant energy valleys/peaks
Table 2.2 Frequencies (in units of meV) of the phonon modes relevant to the carrier-phonon interactionat the high symmetry points in the FBZ for monolayer MoSe2, WS2 and WSe2
Table 2.3 Calculated intrinsic mobilities and saturation velocities of TMDs at room temperature
Table 2.4 Estimated deformation potential constants for electron-phonon interaction in the lowest con-duction band of monolayer MX2
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