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Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

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Figure

Fig. 1. Schematic of interference lithography setup used
Fig. 2. SEM images of (a) Ag nanoparticles deposited    from AgNO3 electroless plating solution, and (b) 30 nm evaporated Ag layer
Fig. 3. (a) SEM image of rhomboidal shape sample     MaCE and (b) reflection spectra of PC sample for both P and S polarizations
Fig. 4. SEM images of samples (a) with 19 nm Ag layer thickness that was etched for 10 min, and (b) and (c)  with a 30 nm Ag layer thickness that were etched 10 min and 15 min respectively

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