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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices

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Figure

Fig. 1 (Color online) schematics of the metamorphic InAs/In0.15Ga0.85As/si-GaAs (right) and InAs/GaAs/si-GaAs (left) QD samples investigated; AFMimages of the uncapped structures are shown
Fig. 2 (Color online) room temperature PV spectra of thecontacted to only MBE layers [45] (black curves) and through thesemi-insulatingthrough thebelow 1.68 and 1.44 eV respectively forof the curves are given in the insets; the QD PL bands measuredbefore [
Fig. 3 (Color online) calculated band profile in the metamorphic InAs/explain the PV mechanism
Fig. 4 (Color online) room temperature photocurrent spectra of thesimetamorphic InAs/In0.15Ga0.85As/si-GaAs and conventional InAs/GaAs/-GaAs QD structures
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