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Figure

Fig. 1 Schematic diagram of ion-shower-doping system used in this  work.
Figure 2 shows sheet resistance as a function of acceleration voltage after activation annealing
Fig. 3 TEM micrographs for (a) the sample implanted with 15-kV P+, followed by (b) 550-30min annealing, and (c) 600-30min
Fig. 4 Sheet resistance as a function of annealing temperature (a) Phosphorous doping with acceleration voltages from 3 kV to 15 kV

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