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Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon Carbide on Various Materials Surface

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Figure

Figure 1. Steps for silicon carbide film deposition. Step (A): dangling bond formation using argon plasma at 10 Pa for 20 min at room temperature; Step (B): silicon carbide film formation at room temperature using monomethylsi-lane gas at 1% and 10 Pa for
Figure 2. Silicon carbide film deposition process linked with the reactive surface preparation by means of the argon plasma etching
Figure 3. Depth profiles of SiC, SiC2, C3, C6, Si4 and Si2O5 in the film ob-tained on silicon substrates, measured by ToF-SIMS
Figure 4. SEM image of aluminum substrate surface (a-1) before and (a-2) after the deposition
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