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Thermally activated defects in float zone silicon : effect of nitrogen on the introduction of deep level states

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Figure

FIG. 2. DLTS spectra recorded on the samples from the central region of an-type nitrogen rich FZ-Si wafer in the as received state, and following30 min annealing in Ar at 500 �C, 950 �C, and 950 �C followed by 500 �C.Measurement settings [DLTS rate window
FIG. 4. DLTS spectra recorded on the samples from the central region of ann-type nitrogen lean FZ-Si wafer in the as grown state and following 30 minannealing in Ar at 500 �C, 950 �C, and 950 �C followed by 500 �C.Measurement settings and the defect concen
FIG. 6. DLTS spectra recorded on n-type nitrogen rich and nitrogen leanfloat zone silicon following annealing at 500 �C for 30 min in Ar, N2, andO2
TABLE I. Properties of electrically active states measured in the samples from central parts of nitrogen rich silicon following annealing at 500 �C for 30 min.
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