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Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

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Figure

Fig. 2 shows the measured on-state resistance for a 1200 V/24 A SiCMOSFET with datasheet CMF10120D from Cree/Wolfspeed, at differentVGS voltages, ranging from 10.5 V to 20 V and temperatures of 22 °C and125 °C.
Fig. 4. Measuredfor different RDS-ON of a 650 V/39 A SiC Trench MOSFET as a function of temperature, VGS voltages.
Fig. 8. dIDS/dt during turn-on of a 1200 V/42 A SiC MOSFET as a function of temperature fordifferent gate driver voltages and RGEXT = 47 Ω.
Table 1

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