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IMPLEMENTATION AND DESIGN OF 6T-SRAM WITH READ AND WRITE ASSIST CIRCUITS

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Figure

Figure 1 Technology versus SRAM Cell Size
Figure 2 Plot of SRAM nMOS transistors of 90-nm and 65-nm technologies   Fig.2 shows the sigma of the local V th   variability of SRAM nMOS transistors using 90-nm  and 65-nm technologies the local V th  variability is in proportion to the inverse square r
Figure 4 Schematic of the Bit Line Sense Amplifier Circuit.
Figure 5 Circuit Schematic of the MUX, Latch and Output Driver Cell  D. Demultiplexer, latch and input data driver cell
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