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Electronic structure of the neutral silicon vacancy center in diamond

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Figure

FIG. 1. SiVeach case,σpendicular) to the stress direction. The transition at 946 nmsplits into components 1–4 under ⟨1 1 1isation between the components observed at high stress indi-cating electronic degeneracy
FIG. 2. Comparison of experiment (dots) with the coupled Eandintensity of thestress axis (in degrees)
FIG. 3. (a) Comparison of PL measurements of the 946 nmand associated stress-induced transitions (solid lines) with the976 nm local mode (dots)
FIG. 4.(a) The electronic structure of SiV0 proposed asa result of uniaxial stress measurements

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