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Charge transport mechanisms and memory effects in amorphous TaNx thin films

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Figure

Figure 1 Simplified diagrams of C-AFM and devices. (a) The Pt/Ir-TaNx-Au device. (b) The Pt/Ir-TaNx-Ag device.
Figure 3 FIB and TEM images of the TaNx film deposited on Si. (a) Cross section of the TaNx film deposited on Si obtained with FIB technique
Figure 5, it is found that they exhibit a power-likeHowever, after the examination of the I-V curves in(Figure 5a) to almost linear (Figure 5c) response ratherthan the characteristic exponential behavior of the abovecharge carrier transport mechanisms, ind
Figure 5 C-AFM measurements of a-TaNx. (a) Positive I-V curves (solid lines) of TaNx deposited on Au for four different points fitted by thespace-charge-limited current (SCLC) model (dash lines)
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