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Formation of Ge Sn nanodots on Si(100) surfaces by molecular beam epitaxy

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Figure

Figure 1 The dependence of 2D-3D transition thickness duringtemperature in the range of 150-450°Cthe epitaxy of the Ge0.96Sn0.04 film on the substrate.
Figure 3 (a) STM image (200 × 200 nm2) from the Ge0.96Sn0.04 film with 1.08 nm thickness, grown at 250°C
Figure 7 The dependence of relation of height to lateral sizeon the lateral size of ND

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