VBPW34S, VBPW34SR
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Vishay Semiconductors
Silicon PIN Photodiode
DESCRIPTION
VBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area detecting visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition APPLICATIONS
• High speed photo detector
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
21733
VBPW34S
VBPW34SR
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm)
VBPW34S 55 ± 65 430 to 1100
VBPW34SR 55 ± 65 430 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VBPW34S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
VBPW34SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 60 V
Power dissipation T ≤ 25 °C P 215 mW
VBPW34S, VBPW34SR
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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF 1 1.3 V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 2 30 nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 70 pF
VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV
Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 50 μA
Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K
Reverse light current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 45 55 μA
Angle of half sensitivity ϕ ± 65 deg
Wavelength of peak sensitivity λp 940 nm
Range of spectral bandwidth λ0.1 430 to 1100 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz
Rise time VR = 10 V, RL = 1 kΩ,
λ = 820 nm tr 100 ns
Fall time VR = 10 V, RL = 1 kΩ,
λ = 820 nm tf 100 ns
20 40 60 80
1 10 100 1000
100 94 8403
VR = 10 V
Tamb - Ambient Temperature (°C) Iro - Reverse Dark Current (nA)
0.6 0.8 1.0 1.2 1.4
94 8409
VR= 5 V λ = 950 nm
100 80 60 40 20 0
I - Relative Reverse Light Current
T - Ambient Temperature (°C)amb
ra rel
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Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1 1 10 100 1000
Ira - Reverse Light Current (µA)
Ee - Irradiance (mW/cm2) 10 12787
VR = 5 V λ = 950 nm
0.1 1 10
1 10 100
VR - Reverse Voltage (V) 100 12788
Ira - Reverse Light Current (µA)
1 mW/cm2 0.5 mW/cm2
0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2
= 950 nm λ
20 40 60 80
E = 0 f = 1 MHz
CD - Diode Capacitance (pF)
350 550 750 950
0 0.2 0.4 0.6 0.8 1.0
1150
94 8420 λ - Wavelength (nm)
S(λ)rel - Relative Spectral Sensitivity
0.4 0.2 0
Srel - Relative Radiant Sensitivity
94 8406 0.6 0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7 1.0
ϕ - Angular Displacement
VBPW34S, VBPW34SR
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PACKAGE DIMENSIONS FOR VBPW34S in millimeters
Drawing-No.: 6.541-5086.01-4 Issue: 1; 15.04.10 22105
8.9
5.4
1.8
Recommended solder pad specifications
according to DIN technical drawings
Anode Cathode
2.2 0.18 ± 0.2
4.4 ± 0.1
1.95 3.9 ± 0.1
1 ± 0.15
6.4 ± 0.3
0.8 ± 0.1
1.6 ± 0.1
Chip Size 3 x 3
1.2 ± 0.1 0.1 -0.1 (0.47 ref.)
Flat area 0.3 min.
0.75 ± 0.050.15 ± 0.02
VBPW34S, VBPW34SR
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PACKAGE DIMENSIONS FOR VBPW34SR in millimeters
Drawing-No.: 6.541-5085.01-4 Issue: 1; 15.04.10
8.9 5.4
1.8
Recommended solder pad
specifications according to DIN technical drawings
Anode Cathode
2.2 0.18 ± 0.2
4.4 ± 0.1
1.95 3.9 ± 0.1
1 ± 0.3
6.4 ± 0.3
0.8 ± 0.1
1.6 ± 0.1
Chip Size 3 x 3
0.1 min. (0.47 ref.)
Flat area 0.3 min
0.75 ± 0.050.15 ± 0.02
1.2 ± 0.1
22104
VBPW34S, VBPW34SR
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Vishay Semiconductors
TAPING DIMENSIONS FOR VBPW34S in millimeters
TAPING DIMENSIONS FOR VBPW34SR in millimeters
21730
21731
VBPW34S, VBPW34SR
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Vishay Semiconductors
REEL DIMENSIONS FOR VBPW34S AND VBPW34SR in millimeters
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3 Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 % DRYING
21732
50 100 150 200 250 300
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s 217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s 255 °C
Legal Disclaimer Notice
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Disclaimer
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