Parameter Symbol Values Unit. 120 Gate source voltage V GS ± 20 V ESD-Sensitivity HBM as per MIL-STD 883 Class 1 Power dissipation

Data Sheet 1 05.99 SIPMOS^® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Pin 1 Pin 2 Pin 3

G D S

Type V_DS I_D R_DS(on) Package Ordering Code

BUZ 73 L 200 V 7 A 0.4 Ω ^{TO-220 AB} C67078-S1328-A2

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current T_C = 28 ˚C

I_D

7

A

Pulsed drain current T_C = 25 ˚C

I_Dpuls

28

Avalanche current,limited by T_jmax I_AR 7

Avalanche energy,periodic limited by T_jmax E_AR 6.5 mJ

Avalanche energy, single pulse I_D = 7 A, V_DD = 50 V, R_GS = 25 Ω L = 3.67 mH, T_j = 25 ˚C

E_AS

120

Gate source voltage V_GS ± ^{20 V}

ESD-Sensitivity HBM as per MIL-STD 883 Class 1

Power dissipation T_C = 25 ˚C

P_tot

40

W

Operating temperature T_j -55 ... + 150 ˚C

Storage temperature T_stg -55 ... + 150

Thermal resistance, chip case R_thJC ≤ ^{3.1 K/W}

Thermal resistance, chip to ambient R_thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

BUZ 73L

Electrical Characteristics, at T_j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage V_GS = 0 V, I_D = 0.25 mA, T_j = 25 ˚C

V_(BR)DSS

200 - -

V

Gate threshold voltage V_GS=V_DS, I_D = 1 mA

V_GS(th)

1.2 1.6 2

Zero gate voltage drain current V_DS = 200 V, V_GS = 0 V, T_j = 25 ˚C V_DS = 200 V, V_GS = 0 V, T_j = 125 ˚C

I_DSS

- -

10 0.1

100 1

µA

Gate-source leakage current V_GS = 20 V, V_DS = 0 V

I_GSS

- 10 100

nA

Drain-Source on-resistance V_GS = 5 V, I_D = 3.5 A

R_DS(on)

- 0.3 0.4

Ω

Data Sheet 3 05.99

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics Transconductance

V_DS≥ ² _{* ID *} ^RDS(on)max, I_D = 3.5 A

g_fs

5 6.5 -

S

Input capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_iss

- 630 840

pF

Output capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_oss

- 120 200

Reverse transfer capacitance V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_rss

- 60 90

Turn-on delay time

V_DD = 30 V, V_GS = 5 V, I_D = 3 A R_GS = 50 Ω

t_d(on)

- 15 20

ns

Rise time

V_DD = 30 V, V_GS = 5 V, I_D = 3 A R_GS = 50 Ω

t_r

- 60 90

Turn-off delay time

V_DD = 30 V, V_GS = 5 V, I_D = 3 A R_GS = 50 Ω

t_d(off)

- 100 130

Fall time

V_DD = 30 V, V_GS = 5 V, I_D = 3 A R_GS = 50 Ω

t_f

- 40 50

Electrical Characteristics, at T_j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current T_C = 25 ˚C

I_S

- - 7

A

Inverse diode direct current,pulsed T_C = 25 ˚C

I_SM

- - 28

Inverse diode forward voltage V_GS = 0 V, I_F = 14 A

V_SD

- 1.1 1.7

V

Reverse recovery time

V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs

t_rr

- 140 -

ns

Reverse recovery charge

V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs

Q_rr

- 0.7 -

µC

Data Sheet 5 05.99 P_tot = ƒ(T_C)

0 20 40 60 80 100 120 ˚C 160

T_C 0

5 10 15 20 25 30 35 W 45

P_tot

I_D = ƒ(T_C)

parameter: V_GS ≥ 5 V

0 20 40 60 80 100 120 ˚C 160

T_C 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 A 7.5

I_D

Safe operating area I_D = ƒ(V_DS)

parameter: D = 0.01, T_C = 25˚C

10 -1

10 0

10 1

10 2

A ID

10 ⁰ 10 ¹ 10 ² V

V_DS ^{R DS(on)}

= V ^DS / I D

DC

10 ms 1 ms 100 µs

tp = 15.0µs

Transient thermal impedance Z_{th JC} = ƒ(t_p)

parameter: D = t_p / T

10 -3

10 -2

10 -1

10 0

10 1

K/W

ZthJC

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1 s 10 ⁰ t_p

single pulse 0.01

0.02 0.05 0.10 0.20 D = 0.50

Typ. output characteristics I_D = ƒ(V_DS)

parameter: t_p = 80 µs

0 2 4 6 8 V 12

V_DS 0

2 4 6 8 10 12 A 16

ID

V_GS [V]

a

a 2.0

b

b 2.5

c

c 3.0

d

d 3.5

e

e 4.0

f

f 4.5

g

g 5.0

h

h 5.5

i

i 6.0

j

j 7.0

k

k 8.0

l Ptot = 40W

l 10.0

Typ. drain-source on-resistance R_{DS (on)} = ƒ(I_D)

parameter: V_GS

0 2 4 6 8 10 A 13

I_D 0.0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Ω

1.3

RDS (on)

V_GS [V] = a 2.0 V_GS [V] =

a

a 2.5

b

b 3.0

c

c 3.5

d

d 4.0

e

e 4.5

f

f 5.0

g

g 5.5

h

h 6.0

i

i 7.0

j

j 8.0

k

k 10.0

Typ. transfer characteristics I_D = f (V_GS) parameter: t_p = 80 µs

V_DS≥^{2 x I}_D ^{x R}_DS(on)max

0 1 2 3 4 5 6 7 8 V 10

V_GS 0

2 4 6 8 10 12 14 A 18

I_D

Typ. forward transconductance g_fs = f (I_D) parameter: t_p = 80 µs,

V_DS≥^{2 x I}_D ^{x R}_DS(on)max

0 2 4 6 8 10 12 A 15

I_D 0

1 2 3 4 5 6 7 8 9 10 S 12

g_fs

Data Sheet 7 05.99 R_{DS (on)} = ƒ(T_j)

parameter: I_D = 3.5 A, V_GS = 5 V

-60 -20 20 60 100 ˚C 160

T_j 0.0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Ω

1.3

RDS (on)

typ 98%

V_{GS (th)} = ƒ(T_j)

parameter: V_GS = V_DS, I_D = 1 mA

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6

VGS(th)

-60 -20 20 60 100 ˚C 160

T_j 2%

typ 98%

Typ. capacitances C = f (V_DS)

parameter:V_GS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40

VDS

10 1

10 2

10 3

10 4

pF C

C_iss

C_oss

C_rss

Forward characteristics of reverse diode I_F = ƒ(V_SD)

parameter: T_j, t_p = 80 µs

10 -1

10 0

10 1

10 2

A IF

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V_SD T_j = 25 ˚C typ

T_j = 25 ˚C (98%) T_j = 150 ˚C typ

T_j = 150 ˚C (98%)

Avalanche energy E_AS = ƒ(T_j) parameter: I_D = 7 A, V_DD = 50 V R_GS = 25 Ω, L = 3.67 mH

20 40 60 80 100 120 ˚C 160

T_j 0

10 20 30 40 50 60 70 80 90 100 110 mJ 130

EAS

Typ. gate charge V_GS = ƒ(Q_Gate)

parameter: I_{D puls} = 63 A

0 10 20 30 40 50 60 70 80 nC 100

Q_Gate 0

2 4 6 8 10 12 V 16

VGS

DS max

0,8 V

DS max

0,2 V

Drain-source breakdown voltage V_(BR)DSS = ƒ(T_j)

-60 -20 20 60 100 ˚C 160

T_j 180

185 190 195 200 205 210 215 220 225 230 V 240

V(BR)DSS